3N65ZL-TF3-T datasheet(2/8 Pages) UTC

tên linh kiện	3N65ZL-TF3-T

Giải thích chi tiết về linh kiện	3A, 650V N-CHANNEL POWER MOSFET

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3N65Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-746.A

ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

650

V

Gate-Source Voltage

VGSS

±30

V

Avalanche Current (Note 2)

IAR

3.0

A

Continuous Drain Current

ID

3.0

A

Pulsed Drain Current (Note 2)

IDM

12

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

200

mJ

Repetitive (Note 2)

EAR

7.5

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

PD

34

W

Junction Temperature

TJ

+150

℃

Operating Temperature

TOPR

-55 ~ +150

℃

Storage Temperature

TSTG

-55 ~ +150

℃

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 64mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

4. ISD ≤ 3.0A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

θJA

62.5

°C/W

Junction to Case

θJC

3.68

°C/W

ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0 V, ID = 250 μA

650

V

Drain-Source Leakage Current

IDSS

VDS = 650 V, VGS = 0 V

10

μA

Gate-Source Leakage Current

Forward

IGSS

VGS = 30 V, VDS = 0 V

100

nA

Reverse

VGS = -30 V, VDS = 0 V

-100

nA

Breakdown Voltage Temperature Coefficient

BV

△

DSS/△TJ

ID=250μA,Referenced to 25°C

0.6

V/℃

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250 μA

2.0

4.0

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10V, ID = 1.5A

2.9

3.8

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS = 25V, VGS = 0V,

f = 1MHz

350

450

pF

Output Capacitance

COSS

50

65

pF

Reverse Transfer Capacitance

CRSS

5.5

7.5

pF

Số phần tương tự - 3N65ZL-TF3-T

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Unisonic Technologies	3N65ZL-TF3-T	350Kb / 8P	N-CHANNEL POWER MOSFET

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Mô tả tương tự - 3N65ZL-TF3-T

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Unisonic Technologies	3N65A	399Kb / 8P	3A, 650V N-CHANNEL POWER MOSFET
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Microdiode Electronics ...	10N65F	527Kb / 4P	650V N-Channel Power MOSFET
DIYI Electronic Technol...	6N65	1Mb / 8P	650V N-Channel Power MOSFET
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