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MCM63F733ATQ10R bảng dữ liệu(PDF) 6 Page - Motorola, Inc

tên linh kiện MCM63F733ATQ10R
Giải thích chi tiết về linh kiện  128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
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nhà sản xuất  MOTOROLA [Motorola, Inc]
Trang chủ  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

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MCM63F733A
6
MOTOROLA FAST SRAM
INTERLEAVED BURST ADDRESS TABLE (LBO = VDD)
1st Address (External)
2nd Address (Internal)
3rd Address (Internal)
4th Address (Internal)
X . . . X00
X . . . X01
X . . . X10
X . . . X11
X . . . X01
X . . . X00
X . . . X11
X . . . X10
X . . . X10
X . . . X11
X . . . X00
X . . . X01
X . . . X11
X . . . X10
X . . . X01
X . . . X00
WRITE TRUTH TABLE
Cycle Type
SGW
SW
SBa
SBb
SBc
SBd
Read
H
H
X
X
X
X
Read
H
L
H
H
H
H
Write Byte a
H
L
L
H
H
H
Write Byte b
H
L
H
L
H
H
Write Byte c
H
L
H
H
L
H
Write Byte d
H
L
H
H
H
L
Write All Bytes
H
L
L
L
L
L
Write All Bytes
L
X
X
X
X
X
ABSOLUTE MAXIMUM RATINGS (See Note 1)
Rating
Symbol
Value
Unit
Notes
Power Supply Voltage
VDD
– 0.5 to + 4.6
V
I/O Supply Voltage
VDDQ
VSS – 0.5 to VDD
V
2
Input Voltage Relative to VSS for
Any Pin Except VDD
Vin, Vout
– 0.5 to VDD + 0.5
V
2
Input Voltage (Three–State I/O)
VIT
– 0.5 to VDDQ + 0.5
V
2
Output Current (per I/O)
Iout
± 20
mA
Package Power Dissipation
PD
1.2
W
3
Temperature Under Bias
Tbias
– 10 to + 85
°C
Storage Temperature
Tstg
– 55 to + 125
°C
NOTES:
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for extended
periods of time could affect device reliability.
2. This is a steady–state DC parameter that is in effect after the power supply has
achieved its nominal operating level. Power sequencing is not necessary.
3. Power dissipation capability is dependent upon package characteristics and use
environment. See Package Thermal Characteristics.
PACKAGE THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Notes
Junction to Ambient (@ 200 lfm)
Single–Layer Board
Four–Layer Board
R
θJA
40
25
°C/W
1, 2
Junction to Board (Bottom)
R
θJB
17
°C/W
3
Junction to Case (Top)
R
θJC
9
°C/W
4
NOTES:
1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient
temperature, air flow, board population, and board thermal resistance.
2. Per SEMI G38–87.
3. Indicates the average thermal resistance between the die and the printed circuit board.
4. Indicates the average thermal resistance between the die and the case top surface via the cold plate method (MIL SPEC–883
Method 1012.1).
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to this high–impedance
circuit.


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