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MCM6264CJ25 bảng dữ liệu(PDF) 2 Page - Motorola, Inc

tên linh kiện MCM6264CJ25
Giải thích chi tiết về linh kiện  8K x 8 Bit Fast Static RAM
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nhà sản xuất  MOTOROLA [Motorola, Inc]
Trang chủ  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MCM6264CJ25 bảng dữ liệu(HTML) 2 Page - Motorola, Inc

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MCM6264C
2
MOTOROLA FAST SRAM
TRUTH TABLE (X = Don’t Care)
E1
E2
G
W
Mode
VCC Current
Output
Cycle
H
X
X
X
Not Selected
ISB1, ISB2
High–Z
X
L
X
X
Not Selected
ISB1, ISB2
High–Z
L
H
H
H
Output Disabled
ICCA
High–Z
L
H
L
H
Read
ICCA
Dout
Read Cycle
L
H
X
L
Write
ICCA
High–Z
Write Cycle
ABSOLUTE MAXIMUM RATINGS (See Note)
Rating
Symbol
Value
Unit
Power Supply Voltage
VCC
– 0.5 to + 7.0
V
Voltage Relative to VSS for Any Pin
Except VCC
Vin, Vout
– 0.5 to VCC + 0.5
V
Output Current
Iout
± 20
mA
Power Dissipation
PD
1.0
W
Temperature Under Bias
Tbias
– 10 to + 85
°C
Operating Temperature
TA
0 to + 70
°C
Storage Temperature — Plastic
Tstg
– 55 to + 125
°C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V ± 10%, TA = 0 to +70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage (Operating Voltage Range)
VCC
4.5
5.0
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3**
V
Input Low Voltage
VIL
– 0.5*
0.8
V
* VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 20 ns)
** VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width ≤ 20 ns)
DC CHARACTERISTICS
Parameter
Symbol
Min
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VCC)
Ilkg(I)
± 1
µA
Output Leakage Current (E1 = VIH, E2 = VIL, or G = VIH, Vout = 0 to VCC)
Ilkg(O)
± 1
µA
Output Low Voltage (IOL = 8.0 mA)
VOL
0.4
V
Output High Voltage (IOH = – 4.0 mA)
VOH
2.4
V
POWER SUPPLY CURRENTS
Parameter
Symbol
– 12
– 15
– 20
– 25
– 35
Unit
AC Active Supply Current (Iout = 0 mA, VCC = Max, f = fmax)
ICCA
150
140
130
120
110
mA
AC Standby Current (E1 = VIH or E2 = VIL, VCC = Max, f = fmax)
ISB1
45
40
35
30
30
mA
Standby Current
(E1
≥ VCC – 0.2 V or E2 ≤ VSS + 0.2 V,
Vin ≤ VSS + 0.2 V or ≥ VCC – 0.2 V)
ISB2
20
20
20
20
20
mA
CAPACITANCE (f = 1 MHz, dV = 3 V, TA = 25°C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Max
Unit
Address Input Capacitance
Cin
6
pF
Control Pin Input Capacitance (E1, E2, G, W)
Cin
6
pF
I/O Capacitance
CI/O
7
pF
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to these high–impedance
circuits.
This CMOS memory circuit has been de-
signed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear
feet per minute is maintained.


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