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MCM6264CJ25 bảng dữ liệu(PDF) 2 Page - Motorola, Inc |
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MCM6264CJ25 bảng dữ liệu(HTML) 2 Page - Motorola, Inc |
2 / 8 page MCM6264C 2 MOTOROLA FAST SRAM TRUTH TABLE (X = Don’t Care) E1 E2 G W Mode VCC Current Output Cycle H X X X Not Selected ISB1, ISB2 High–Z — X L X X Not Selected ISB1, ISB2 High–Z — L H H H Output Disabled ICCA High–Z — L H L H Read ICCA Dout Read Cycle L H X L Write ICCA High–Z Write Cycle ABSOLUTE MAXIMUM RATINGS (See Note) Rating Symbol Value Unit Power Supply Voltage VCC – 0.5 to + 7.0 V Voltage Relative to VSS for Any Pin Except VCC Vin, Vout – 0.5 to VCC + 0.5 V Output Current Iout ± 20 mA Power Dissipation PD 1.0 W Temperature Under Bias Tbias – 10 to + 85 °C Operating Temperature TA 0 to + 70 °C Storage Temperature — Plastic Tstg – 55 to + 125 °C NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to RECOMMENDED OPER- ATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. DC OPERATING CONDITIONS AND CHARACTERISTICS (VCC = 5.0 V ± 10%, TA = 0 to +70°C, Unless Otherwise Noted) RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Typ Max Unit Supply Voltage (Operating Voltage Range) VCC 4.5 5.0 5.5 V Input High Voltage VIH 2.2 — VCC + 0.3** V Input Low Voltage VIL – 0.5* — 0.8 V * VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 20 ns) ** VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width ≤ 20 ns) DC CHARACTERISTICS Parameter Symbol Min Max Unit Input Leakage Current (All Inputs, Vin = 0 to VCC) Ilkg(I) — ± 1 µA Output Leakage Current (E1 = VIH, E2 = VIL, or G = VIH, Vout = 0 to VCC) Ilkg(O) — ± 1 µA Output Low Voltage (IOL = 8.0 mA) VOL — 0.4 V Output High Voltage (IOH = – 4.0 mA) VOH 2.4 — V POWER SUPPLY CURRENTS Parameter Symbol – 12 – 15 – 20 – 25 – 35 Unit AC Active Supply Current (Iout = 0 mA, VCC = Max, f = fmax) ICCA 150 140 130 120 110 mA AC Standby Current (E1 = VIH or E2 = VIL, VCC = Max, f = fmax) ISB1 45 40 35 30 30 mA Standby Current (E1 ≥ VCC – 0.2 V or E2 ≤ VSS + 0.2 V, Vin ≤ VSS + 0.2 V or ≥ VCC – 0.2 V) ISB2 20 20 20 20 20 mA CAPACITANCE (f = 1 MHz, dV = 3 V, TA = 25°C, Periodically Sampled Rather Than 100% Tested) Parameter Symbol Max Unit Address Input Capacitance Cin 6 pF Control Pin Input Capacitance (E1, E2, G, W) Cin 6 pF I/O Capacitance CI/O 7 pF This device contains circuitry to protect the inputs against damage due to high static volt- ages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maxi- mum rated voltages to these high–impedance circuits. This CMOS memory circuit has been de- signed to meet the dc and ac specifications shown in the tables, after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse air flow of at least 500 linear feet per minute is maintained. |
Số phần tương tự - MCM6264CJ25 |
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Mô tả tương tự - MCM6264CJ25 |
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