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MCM6229BBEJ17 bảng dữ liệu(PDF) 2 Page - Motorola, Inc

tên linh kiện MCM6229BBEJ17
Giải thích chi tiết về linh kiện  256K x 4 Bit Static Random Access Memory
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nhà sản xuất  MOTOROLA [Motorola, Inc]
Trang chủ  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MCM6229BBEJ17 bảng dữ liệu(HTML) 2 Page - Motorola, Inc

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MCM6229BB
2
MOTOROLA FAST SRAM
TRUTH TABLE
E
G
W
Mode
I/O Pin
Cycle
Current
H
X
X
Not Selected
High–Z
ISB1, ISB2
L
H
H
Output Disabled
High–Z
ICCA
L
L
H
Read
Dout
Read
ICCA
L
X
L
Write
Din
Write
ICCA
H = High, L = Low, X = Don’t Care
ABSOLUTE MAXIMUM RATINGS (See Note)
Rating
Symbol
Value
Unit
Power Supply Voltage Relative to VSS
VCC
– 0.5 to 7.0
V
Voltage Relative to VSS for Any Pin
Except VCC
Vin, Vout
– 0.5 to VCC + 0.5
V
Output Current (per I/O)
Iout
± 20
mA
Power Dissipation
PD
1.0
W
Temperature Under Bias
Tbias
– 10 to + 85
°C
Operating Temperature
TA
0 to + 70
°C
Storage Temperature
Tstg
– 55 to + 150
°C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V ± 10%, TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage (Operating Voltage Range)
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3**
V
Input Low Voltage
VIL
– 0.5*
0.8
V
*VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 20 ns).
** VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width ≤ 20 ns).
DC CHARACTERISTICS AND SUPPLY CURRENTS
Parameter
Symbol
Min
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VCC)
Ilkg(I)
± 1
µA
Output Leakage Current (E = VIH, Vout = 0 to VCC)
Ilkg(O)
± 1
µA
AC Active Supply Current (Iout = 0 mA, all inputs =
MCM6229BB–15: tAVAV = 15 ns
VIL or VIH, VIL = 0, VIH ≥ 3 V, cycle time ≥ tAVAV min,
MCM6229BB–17: tAVAV = 17 ns
VCC = max)
MCM6229BB–20: tAVAV = 20 ns
MCM6229BB–25: tAVAV = 25 ns
MCM6229BB–35: tAVAV = 35 ns
ICCA
155
150
135
130
110
mA
AC Standby Current (VCC = max, E = VIH, f = fmax)
MCM6229BB–15: tAVAV = 15 ns
MCM6229BB–17: tAVAV = 17 ns
MCM6229BB–20: tAVAV = 20 ns
MCM6229BB–25: tAVAV = 25 ns
MCM6229BB–35: tAVAV = 35 ns
ISB1
45
40
35
30
25
mA
CMOS Standby Current (E
≥ VCC – 0.2 V, Vin ≤ VSS + 0.2 V
or
≥ VCC – 0.2 V, VCC = max, f = 0 MHz)
ISB2
5
mA
Output Low Voltage (IOL = + 8.0 mA)
VOL
0.4
V
Output High Voltage (IOH = – 4.0 mA)
VOH
2.4
V
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to these high–impedance
circuits.
This CMOS memory circuit has been de-
signed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear feet
per minute is maintained.


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