MCM6249

2

MOTOROLA FAST SRAM

E

G

W

Mode

I/O Pin

Cycle

Current

H

X

X

Not Selected

High–Z

—

ISB1, ISB2

L

H

H

Output Disabled

High–Z

—

ICCA

L

L

H

Read

Dout

Read

ICCA

L

X

L

Write

High–Z

Write

ICCA

Rating

Symbol

Value

Unit

Power Supply Voltage Relative to VSS

VCC

– 0.5 to + 7.0

V

Voltage Relative to VSS for Any Pin

Except VCC

Vin, Vout

– 0.5 to VCC + 0.5

V

Output Current (per I/O)

Iout

± 20

mA

Power Dissipation

PD

1.0

W

Temperature Under Bias

Tbias

– 10 to + 85

°C

Operating Temperature

TA

0 to + 70

°C

Storage Temperature — Plastic

Tstg

– 55 to + 150

°C

NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are

exceeded. Functional operation should be restricted to RECOMMENDED OPER-

ATING CONDITIONS. Exposure to higher than recommended voltages for

extended periods of time could affect device reliability.

DC OPERATING CONDITIONS AND CHARACTERISTICS

(VCC = 5.0 V ± 10%, TA = 0 to + 70°C, Unless Otherwise Noted)

RECOMMENDED OPERATING CONDITIONS

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage (Operating Voltage Range)

VCC

4.5

5.0

5.5

V

Input High Voltage

VIH

2.2

—

VCC + 0.3

V

Input Low Voltage

VIL

– 0.5

*

—

0.8

V

*VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 2.0 ns).

DC CHARACTERISTICS

Parameter

Symbol

Min

Max

Unit

Input Leakage Current (All Inputs, Vin = 0 to VCC)

Ilkg(I)

—

± 1.0

µA

Output Leakage Current (E = VIH, Vout = 0 to VCC)

Ilkg(O)

—

± 1.0

µA

Output Low Voltage (IOL = + 8.0 mA)

VOL

—

0.4

V

Output High Voltage (IOH = – 4.0 mA)

VOH

2.4

—

V

POWER SUPPLY CURRENTS

Parameter

Symbol

Min

Typ

Max

Unit

AC Active Supply Current (Iout = 0 mA,

MCM6249–20: tAVAV = 20 ns

VCC = max)

MCM6249–25: tAVAV = 25 ns

MCM6249–35: tAVAV = 35 ns

ICC

—

—

—

175

160

145

190

175

160

mA

AC Standby Current (VCC = max,

MCM6249–20: tAVAV = 20 ns

E = VIH, No other restrictions on

MCM6249–25: tAVAV = 25 ns

other inputs)

MCM6249–35: tAVAV = 35 ns

ISB1

—

—

—

50

40

35

60

50

40

mA

CMOS Standby Current (E

≥ VCC – 0.2 V, Vin ≤ VSS + 0.2 V or

≥ VCC – 0.2 V) (VCC = max, f = 0 MHz)

ISB2

—

10

15

mA

This device contains circuitry to protect the

inputs against damage due to high static

voltages or electric fields; however, it is ad-

vised that normal precautions be taken to avoid

application of any voltage higher than maxi-

mum rated voltages to these high impedance

circuits.

This CMOS memory circuit has been de-

signed to meet the dc and ac specifications

shown in the tables, after thermal equilibrium

has been established. The circuit is in a test

socket or mounted on a printed circuit board

and transverse air flow of at least 500 linear

feet per minute is maintained.