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MCM6246WJ20R2 bảng dữ liệu(PDF) 2 Page - Motorola, Inc |
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MCM6246WJ20R2 bảng dữ liệu(HTML) 2 Page - Motorola, Inc |
2 / 8 page MCM6246 2 MOTOROLA FAST SRAM TRUTH TABLE (X = Don’t Care) E G W Mode I/O Pin Cycle Current H X X Not Selected High–Z — ISB1, ISB2 L H H Output Disabled High–Z — ICCA L L H Read Dout Read ICCA L X L Write High–Z Write ICCA ABSOLUTE MAXIMUM RATINGS (See Note) Rating Symbol Value Unit Power Supply Voltage Relative to VSS VCC – 0.5 to + 7.0 V Voltage Relative to VSS for Any Pin Except VCC Vin, Vout – 0.5 to VCC + 0.5 V Output Current (per I/O) Iout ± 20 mA Power Dissipation PD 1.0 W Temperature Under Bias Tbias – 10 to + 85 °C Ambient Temperature TA 0 to + 70 °C Storage Temperature — Plastic Tstg – 55 to + 150 °C NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are ex- ceeded. Functional operation should be restricted to RECOMMENDED OPERAT- ING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. DC OPERATING CONDITIONS AND CHARACTERISTICS (VCC = 5.0 V ± 10%, TA = 0 to + 70°C, Unless Otherwise Noted) RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Typ Max Unit Supply Voltage (Operating Voltage Range) VCC 4.5 5.0 5.5 V Input High Voltage VIH 2.2 — VCC + 0.3** V Input Low Voltage VIL – 0.5 * — 0.8 V *VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 2.0 ns). ** VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2.0 V ac (pulse width ≤ 2.0 ns). DC CHARACTERISTICS Parameter Symbol Min Max Unit Input Leakage Current (All Inputs, Vin = 0 to VCC) Ilkg(I) — ± 1.0 µA Output Leakage Current (E = VIH, Vout = 0 to VCC) Ilkg(O) — ± 1.0 µA Output Low Voltage (IOL = + 8.0 mA) VOL — 0.4 V Output High Voltage (IOH = – 4.0 mA) VOH 2.4 — V POWER SUPPLY CURRENTS Parameter Symbol Min Typ Max Unit AC Active Supply Current (Iout = 0 mA, MCM6246–17: tAVAV = 17 ns VCC = max) MCM6246–20: tAVAV = 20 ns MCM6246–25: tAVAV = 25 ns MCM6246–35: tAVAV = 35 ns ICC — — — — — 185 170 155 205 200 185 170 mA AC Standby Current (VCC = max, MCM6246–17: tAVAV = 17 ns E = VIH, No other restrictions on MCM6246–20: tAVAV = 20 ns other inputs) MCM6246–25: tAVAV = 25 ns MCM6246–35: tAVAV = 35 ns ISB1 — — — — 55 55 45 35 60 60 50 40 mA CMOS Standby Current (E ≥ VCC – 0.2 V, Vin ≤ VSS + 0.2 V or ≥ VCC – 0.2 V) (VCC = max, f = 0 MHz) ISB2 — 10 15 mA This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields; however, it is ad- vised that normal precautions be taken to avoid application of any voltage higher than maxi- mum rated voltages to these high impedance circuits. This CMOS memory circuit has been de- signed to meet the dc and ac specifications shown in the tables, after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse air flow of at least 500 linear feet per minute is maintained. |
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