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1 / 3 page 2008 .9. 17 1/3 SEMICONDUCTOR TECHNICAL DATA KIC7S66FU SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT Revision No : 3 BILATERAL SWITCH The KIC7S66FU is a high speed C 2MOS BILATERAL SWITCH fabricated with silicon gate C 2MOS technology. It consists of a high speed switch capable of controlling either digital or analog signals while maintaining the C 2MOS low power dissipation. Control input (C) is provided to control the switch. The switch turns ON while the Cl input is high, and the switch turns OFF while low. Input is equipped with protection circuits against static discharge or transient excess voltage. FEATURES ・High Speed : t pd=7ns(Typ.) at VCC=5V. ・Low Power Dissipation : I CC=1μ A(Max.) at Ta=25℃. ・High Noise Immunity : V NIH=VNIL=28% VCC(Min.). ・Low ON Resistance : R ON=100Ω(Typ.) at VCC=9V. ・Low T.H.D : THD=0.05%(Typ.) at V CC=5V. DIM MILLIMETERS A B D G USV 2.00 0.20 1.25 0.1 2.1 0.1 0.2+0.10/-0.05 0-0.1 0.9 0.1 0.65 0.15+0.1/-0.05 B1 H C T G 1 3 2 B B1 D T 5 4 1.3 0.1 A1 +_ +_ +_ +_ +_ MAXIMUM RATINGS (Ta=25℃) MARKING Type Name Lot No. SW PIN CONNECTION (TOP VIEW) GND OUT/IN IN/OUT 3 2 1 CONT. 4 5 VCC CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VCC -0.5~10 V Control Input Voltage VIN -0.5~VCC+0.5 V Swith I/O Voltage VI/O -0.5~VCC+0.5 V Control Diode Current ICK ±20 mA Output Diode Current IOK ±20 mA Through I/O Current IT ±12.5 mA DC VCC/Ground Current ICC ±25 mA Power Dissipation PD 200 mW Storage Temperature Tstg -65~150 ℃ Lead Temperature (10s) TL 260 ℃ |
Số phần tương tự - KIC7S66FU |
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Mô tả tương tự - KIC7S66FU |
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