BUZ101S datasheet(6/8 Pages) SIEMENS

tên linh kiện	BUZ101S

Giải thích chi tiết về linh kiện	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)

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Semiconductor Group

6

04/Nov/1997

Preliminary data

BUZ 101 S

SPP22N05

Typ. output characteristics

I

D = ƒ(VDS)

parameter: tp = 80 µs

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

V

5.0

V

DS

0

5

10

15

20

25

30

35

40

A

50

I

D

V

GS [V]

a

4.0

b

4.5

c

5.0

d

5.5

e

6.0

f

6.5

g

7.0

h

7.5

i

8.0

j

9.0

k

10.0

l

Ptot = 55W

l

20.0

Typ. drain-source on-resistance

R

DS (on) = ƒ(ID)

parameter: tp = 80 µs, Tj = 25 °C

0

5

10

15

20

25

30

35

A

45

I

D

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

Ω

0.19

R

DS (on)

VGS [V] =

a

4.0

VGS [V] =

a

4.5

VGS [V] =

a

5.0

b

5.5

c

6.0

d

6.5

e

7.0

f

7.5

g

8.0

h

9.0

i

10.0

j

20.0

Typ. transfer characteristics ID = f (VGS)

parameter: tp = 80 µs

VDS≥2 x ID x RDS(on)max

0

1

2

3

4

5

6

7

8

V

10

V

GS

0

5

10

15

20

25

30

35

40

45

50

A

60

I

D

Số phần tương tự - BUZ101S

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Siemens Semiconductor G...	BUZ101SL	132Kb / 8P	SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated)
	BUZ101SL-4	90Kb / 8P	SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
	BUZ101SLE3045A	132Kb / 8P	SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated)

More results

Mô tả tương tự - BUZ101S

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Siemens Semiconductor G...	BUZ102	183Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
	BUZ100	185Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
	BUZ103AL	185Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated)
	BUZ102AL	182Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated)
	BUZ104	208Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
	BUZ101	185Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
	BUZ103	186Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
	BUZ101SL-4	90Kb / 8P	SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
	BUZ100SL-4	89Kb / 8P	SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
	BUZ102SL-4	90Kb / 8P	SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

More results

BUZ101S bảng dữ liệu(PDF) 6 Page - Siemens Semiconductor Group

BUZ101S bảng dữ liệu(HTML) 6 Page - Siemens Semiconductor Group

Số phần tương tự - BUZ101S

Mô tả tương tự - BUZ101S

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