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ES1G bảng dữ liệu(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

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Giải thích chi tiết về linh kiện  1 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts
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nhà sản xuất  HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]
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ES1G bảng dữ liệu(HTML) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

  ES1G Datasheet HTML 1Page - Shenzhen Jin Yu Semiconductor Co., Ltd. ES1G Datasheet HTML 2Page - Shenzhen Jin Yu Semiconductor Co., Ltd. ES1G Datasheet HTML 3Page - Shenzhen Jin Yu Semiconductor Co., Ltd.  
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ES1A THRU ES1M
1 Amp Super Fast
Recovery
Silicon Rectifier
50 to 1000 Volts
DO-214AC
(SMAJ) (High Profile)
Features
• For Surface Mount Applications
• Extremely Low Thermal Resistance
• Easy Pick And Place
• High Temp Soldering: 250°C for 10 Seconds At Terminals
• Superfast Recovery Times For High Efficiency
Maximum Ratings
0.070”
0.090”
0.085”
SUGGESTED SOLDER
PAD LAYOUT
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
1.0A
TJ = 75
°C
Peak Forward Surge
Current
IFSM
30A
8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
VF
IFM = 1.0A;
TJ = 25
°C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
5
µA
100
µA
TJ = 25
°C
TJ = 100
°C
Typical Junction
Capacitance
CJ
45pF
Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 200
µsec, Duty cycle 2%
Operating Temperature: -50
°C to +150°C
Storage Temperature: -50
°C to +150°C
Maximum Thermal Resistance; 15
°C/W Junction To Lead
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
ES1M
ES1M
1000V
700V
1000V
ES1A
ES1A
50V
35V
50V
ES1B
ES1B
100V
70V
100V
ES1C
ES1C
150V
105V
150V
ES1D
ES1D
200V
140V
200V
ES1G
ES1G
400V
280V
400V
ES1J
ES1J
600V
420V
600V
ES1K
ES1K
800V
560V
800V
Maximum Reverse
Recovery Time
Trr
IF=0.5A, IR=1.0A,
Irr=0.25A
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.078
.116
1.98
2.95
B
.067
.089
1.70
2.25
C
.002
.008
.05
.20
D
---
.02
---
.51
E
.035
.055
.89
1.40
F
.065
.096
1.65
2.45
G
.205
.224
5.21
5.69
H
.160
.180
4.06
4.57
J
.100
.112
2.57
2.84
H
J
E
F
G
A
B
D
C
Cathode Band
ES1A-D
50ns
          
ES1G-K
60ns
         
ES1M
100ns
          
ES1A-D
.975V
ES1G-K
1.35V
ES1M
1.60V
1 
Date:2011/05
www.htsemi.com
semiconductor
JinYu
Date:2011/05


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