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TSAL6200 bảng dữ liệu(PDF) 1 Page - Vishay Siliconix |
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TSAL6200 bảng dữ liệu(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Document Number: 81010 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 2.2, 22-Jun-09 1 High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs TSAL6200 Vishay Semiconductors DESCRIPTION TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λ p = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 17° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition APPLICATIONS • Infrared remote control units with high power requirements • Free air transmission systems • Infrared source for optical counters and card readers Note Test conditions see table “Basic Characteristics” Note MOQ: minimum order quantity Note Tamb = 25 °C, unless otherwise specified 94 8389 PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λ P (nm) tr (ns) TSAL6200 60 ± 17 940 800 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSAL6200 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5V Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA Surge forward current tp = 100 µs IFSM 1.5 A Power dissipation PV 160 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C Thermal resistance junction/ambient J-STD-051, leads 7 mm soldered on PCB RthJA 230 K/W |
Số phần tương tự - TSAL6200_09 |
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Mô tả tương tự - TSAL6200_09 |
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