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ST110S16P1LPBF bảng dữ liệu(PDF) 3 Page - Vishay Siliconix |
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3 / 10 page Document Number: 94393 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 17-Aug-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 ST110SPbF Series Phase Control Thyristors (Stud Version), 110 A Vishay Semiconductors TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS TYP. MAX. Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 5 W Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 1 Maximum peak positive gate current IGM TJ = TJ maximum, tp 5 ms 2.0 A Maximum peak positive gate voltage + VGM 20 V Maximum peak negative gate voltage - VGM 5.0 DC gate current required to trigger IGT TJ = - 40 °C Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied 180 - mA TJ = 25 °C 90 150 TJ = 125 °C 40 - DC gate voltage required to trigger VGT TJ = - 40 °C 2.9 - V TJ = 25 °C 1.8 3.0 TJ = 125 °C 1.2 - DC gate current not to trigger IGD TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 10 mA DC gate voltage not to trigger VGD 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum operating junction temperature range TJ - 40 to 125 °C Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case RthJC DC operation 0.195 K/W Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.08 Mounting torque, ± 10 % Non-lubricated threads 15.5 (137) Nm (lbf · in) Lubricated threads 14 (120) Approximate weight 130 g Case style See dimensions - link at the end of datasheet TO-209AC (TO-94) |
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