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SIZ702DT-T1-GE3 bảng dữ liệu(PDF) 3 Page - Vishay Siliconix |
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SIZ702DT-T1-GE3 bảng dữ liệu(HTML) 3 Page - Vishay Siliconix |
3 / 12 page Document Number: 65525 S09-2266-Rev. A, 02-Nov-09 www.vishay.com 3 Vishay Siliconix SiZ702DT New Product Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Dynamica Turn-On Delay Time td(on) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω Ch-1 Ch-2 15 25 ns Rise Time tr Ch-1 Ch-2 12 20 Turn-Off Delay Time td(off) Ch-1 Ch-2 20 30 Fall Time tf Ch-1 Ch-2 10 15 Turn-On Delay Time td(on) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω Ch-1 Ch-2 10 15 Rise Time tr Ch-1 Ch-2 12 20 Turn-Off Delay Time td(off) Ch-1 Ch-2 20 30 Fall Time tf Ch-1 Ch-2 10 15 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C Ch-1 Ch-2 16 A Pulse Diode Forward Currenta ISM Ch-1 Ch-2 50 Body Diode Voltage VSD IS = 10 A, VGS = 0 V Ch-1 Ch-2 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Ch-1 Ch-2 20 40 ns Body Diode Reverse Recovery Charge Qrr Ch-1 Ch-2 10 20 nC Reverse Recovery Fall Time ta Ch-1 Ch-2 11 ns Reverse Recovery Rise Time tb Ch-1 Ch-2 9 |
Số phần tương tự - SIZ702DT-T1-GE3 |
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Mô tả tương tự - SIZ702DT-T1-GE3 |
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