công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
SI1410EDH bảng dữ liệu(PDF) 2 Page - Vishay Siliconix |
|
SI1410EDH bảng dữ liệu(HTML) 2 Page - Vishay Siliconix |
2 / 11 page www.vishay.com 2 Document Number: 71409 S10-0935-Rev. B, 19-Apr-10 Vishay Siliconix Si1410EDH Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.45 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V ± 1 µA VDS = 0 V, VGS = ± 12 V ± 10 mA Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V 1 µA VDS = 16 V, VGS = 0 V, TJ = 85 °C 5 On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V 4 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 3.7 A 0.055 0.070 Ω VGS = 2.5 V, ID = 3.4 A 0.065 0.080 VGS = 1.8 V, ID = 1.7 A 0.080 0.100 Forward Transconductancea gfs VDS = 10 V, ID = 3.7 A 10 S Diode Forward Voltagea VSD IS = 1.4 A, VGS = 0 V 0.75 1.1 V Dynamicb Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 3.7 A 5.6 8 nC Gate-Source Charge Qgs 0.75 Gate-Drain Charge Qgd 1.10 Turn-On Delay Time td(on) VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω 0.15 0.25 µs Rise Time tr 0.4 0.6 Turn-Off Delay Time td(off) 1.9 2.8 Fall Time tf 1.2 1.8 Gate-Current vs. Gate-Source Voltage 0 2 4 6 8 10 0 3 6 9 12 15 18 VGS - Gate-to-Source Voltage (V) Gate-Current vs. Gate-Source Voltage 0.01 100 10 000 0.1 1 10 1000 0 36 9 12 VGS - Gate-to-Source Voltage (V) TJ = 150 °C TJ = 25 °C |
Số phần tương tự - SI1410EDH |
|
Mô tả tương tự - SI1410EDH |
|
|
Link URL |
Chính sách bảo mật |
ALLDATASHEET.VN |
Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |