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SI1304BDL-T1-GE3 bảng dữ liệu(PDF) 2 Page - Vishay Siliconix |
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SI1304BDL-T1-GE3 bảng dữ liệu(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com 2 Document Number: 73480 S10-0645-Rev. C, 22-Mar-10 Vishay Siliconix Si1304BDL Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 27.3 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ 3 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.6 1.3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µA VDS = 30 V, VGS = 0 V, TJ = 70 °C 5 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V 4 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 0.9 0.216 0.270 Ω VGS = 2.5 V, ID = 0.75 0.308 0.385 Forward Transconductancea gfs VDS = 15 V, ID = 0.9 2 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 100 pF Output Capacitance Coss 30 Reverse Transfer Capacitance Crss 20 Total Gate Charge Qg VDS = 15 V, VGS = 4.5 V, ID = 0.9 1.8 2.7 nC VDS = 15 V, VGS = 2.5 V, ID = 0.9 1.1 1.7 Gate-Source Charge Qgs 0.4 Gate-Drain Charge Qgd 0.6 Gate Resistance Rg f = 1 MHz 1.5 2.3 Ω Turn-On Delay Time td(on) VDD = 15 V, RL = 22 Ω ID ≅ 0.68 A, VGEN = 4.5 V, Rg = 1 Ω 10 15 ns Rise Time tr 30 45 Turn-Off Delay Time td(off) 525 Fall Time tf 10 15 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode IS TC = 25 °C 0.31 A Pulse Diode Forward Currenta ISM 4 Body Diode Voltage VSD IS = 0.28 A 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 0.28 A, dI/dt = 100 A/µs, TJ = 25 °C 50 75 ns Body Diode Reverse Recovery Charge Qrr 105 160 nC Reverse Recovery Fall Time ta 34 ns Reverse Recovery Rise Time tb 16 |
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Mô tả tương tự - SI1304BDL-T1-GE3 |
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