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SI1304BDL-T1-GE3 bảng dữ liệu(PDF) 2 Page - Vishay Siliconix

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SI1304BDL-T1-GE3 bảng dữ liệu(HTML) 2 Page - Vishay Siliconix

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Document Number: 73480
S10-0645-Rev. C, 22-Mar-10
Vishay Siliconix
Si1304BDL
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
30
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
27.3
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
3
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
0.6
1.3
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
µA
VDS = 30 V, VGS = 0 V, TJ = 70 °C
5
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 4.5 V
4
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V, ID = 0.9
0.216
0.270
Ω
VGS = 2.5 V, ID = 0.75
0.308
0.385
Forward Transconductancea
gfs
VDS = 15 V, ID = 0.9
2
S
Dynamicb
Input Capacitance
Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
100
pF
Output Capacitance
Coss
30
Reverse Transfer Capacitance
Crss
20
Total Gate Charge
Qg
VDS = 15 V, VGS = 4.5 V, ID = 0.9
1.8
2.7
nC
VDS = 15 V, VGS = 2.5 V, ID = 0.9
1.1
1.7
Gate-Source Charge
Qgs
0.4
Gate-Drain Charge
Qgd
0.6
Gate Resistance
Rg
f = 1 MHz
1.5
2.3
Ω
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 22 Ω
ID ≅ 0.68 A, VGEN = 4.5 V, Rg = 1 Ω
10
15
ns
Rise Time
tr
30
45
Turn-Off Delay Time
td(off)
525
Fall Time
tf
10
15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
IS
TC = 25 °C
0.31
A
Pulse Diode Forward Currenta
ISM
4
Body Diode Voltage
VSD
IS = 0.28 A
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 0.28 A, dI/dt = 100 A/µs, TJ = 25 °C
50
75
ns
Body Diode Reverse Recovery Charge
Qrr
105
160
nC
Reverse Recovery Fall Time
ta
34
ns
Reverse Recovery Rise Time
tb
16


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