công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
IRLZ24 bảng dữ liệu(PDF) 2 Page - Vishay Siliconix |
|
IRLZ24 bảng dữ liệu(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com Document Number: 91326 2 S11-0520-Rev. D, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRLZ24, SiHLZ24 Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC -2.5 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 60 - - V VDS Temperature Coefficient V DS/TJ Reference to 25 °C, ID = 1 mA - 0.060 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.0 - 2.0 V Gate-Source Leakage IGSS VGS = 10 - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V - - 25 μA VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 5.0 V ID = 10 Ab -- 0.10 VGS = 4.0 V ID = 8.5 Ab -- 0.14 Forward Transconductance gfs VDS = 25 V, ID = 10 Ab 7.3 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 870 - pF Output Capacitance Coss - 360 - Reverse Transfer Capacitance Crss -53 - Total Gate Charge Qg VGS = 5.0 V ID = 17 A, VDS = 48 V, see fig. 6 and 13b -- 18 nC Gate-Source Charge Qgs -- 4.5 Gate-Drain Charge Qgd -- 12 Turn-On Delay Time td(on) VDD = 30 V, ID = 17 A, Rg = 9.0 , RD = 1.7, see fig. 10b -11 - ns Rise Time tr - 110 - Turn-Off Delay Time td(off) -23 - Fall Time tf -41 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 17 A Pulsed Diode Forward Currenta ISM -- 68 Body Diode Voltage VSD TJ = 25 °C, IS = 17 A, VGS = 0 Vb -- 1.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μsb - 110 260 ns Body Diode Reverse Recovery Charge Qrr -0.49 1.5 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
Số phần tương tự - IRLZ24 |
|
Mô tả tương tự - IRLZ24 |
|
|
Link URL |
Chính sách bảo mật |
ALLDATASHEET.VN |
Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |