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IRFZ48S bảng dữ liệu(PDF) 2 Page - Vishay Siliconix

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Document Number: 90377
2
S11-1045-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
 300 μs; duty cycle  2 %.
c. Uses IRFZ48/SiHFZ48 data and test conditions.
d. Calculated continuous current based on maximum allowable junction temperature.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
-40
°C / W
Maximum Junction-to-Case (Drain)
RthJC
-0.8
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0, ID = 250 μA
60
-
-
V
VDS Temperature Coefficient
VDS/TJ
Reference to 25 °C, ID = 1 mAc
-
0.060
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
-
-
25
μA
VDS = 48 V, VGS = 0 V, TJ = 150 °C
-
-
250
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 43 Ab
-
-
0.018
Forward Transconductance
gfs
VDS = 25 V, ID = 43 Ab
27
-
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5c
-
2400
-
pF
Output Capacitance
Coss
-
1300
-
Reverse Transfer Capacitance
Crss
-
190
-
Total Gate Charge
Qg
VGS = 10 V
ID = 72 A, VDS = 48 V,
see fig. 6 and 13b, c
-
-
110
nC
Gate-Source Charge
Qgs
--
29
Gate-Drain Charge
Qgd
--
36
Turn-On Delay Time
td(on)
VDD = 30 V, ID = 72 A,
Rg = 9.1 , RD = 0.34 , see fig. 10b, c
-8.1
-
ns
Rise Time
tr
-
250
-
Turn-Off Delay Time
td(off)
-
210
-
Fall Time
tf
-
250
-
Internal Source Inductance
LS
Between lead, and center of die contact
-
7.5
-
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
50c
A
Pulsed Diode Forward Currenta
ISM
-
-
290
Body Diode Voltage
VSD
TJ = 25 °C, IS = 72 A, VGS = 0 Vb
--
2.0
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 72 A, dI/dt = 100 A/μsb, c
-
120
180
ns
Body Diode Reverse Recovery Charge
Qrr
-
500
800
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
S
D
G


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