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IRFZ48RL bảng dữ liệu(PDF) 1 Page - Vishay Siliconix |
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IRFZ48RL bảng dữ liệu(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Document Number: 91296 www.vishay.com S11-1054-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Dynamic dV/dt • 175 °C Operating Temperature •Fast Switching • Fully Avalanche Rated • Drop in Replacement of the IRFZ48, SiHFZ48 for Linear/Audio Applications • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 W in a typical surface mount application. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, Starting TJ = 25 °C, L = 22 μH, Rg = 25 , IAS = 72 A (see fig. 12). c. ISD 72 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. e. Current limited by the package, (die current = 72 A). PRODUCT SUMMARY VDS (V) 60 RDS(on) ()VGS = 10 V 0.018 Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single N-Channel MOSFET G D S D2PAK (TO-263) G D S I2PAK (TO-262) G D S ORDERING INFORMATION Package D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free and Halogen-free SiHFZ48RS-GE3 - Lead (Pb)-free IRFZ48RSPbF IRFZ48RLPbF SiHFZ48RS-E3 SiHFZ48RL-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Currente VGS at 10 V TC = 25 °C ID 50 A TC = 100 °C 50 Pulsed Drain Currenta, e IDM 290 Linear Derating Factor 1.3 W/°C Single Pulse Avalanche Energyb, e EAS 100 mJ Maximum Power Dissipation TC = 25 °C PD 190 W Peak Diode Recovery dV/dtc, e dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature)d for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply |
Số phần tương tự - IRFZ48RL |
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Mô tả tương tự - IRFZ48RL |
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