Document Number: 91296

www.vishay.com

S11-1054-Rev. C, 30-May-11

1

This document is subject to change without notice.

Power MOSFET

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL

Vishay Siliconix

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Advanced Process Technology

• Dynamic dV/dt

• 175 °C Operating Temperature

•Fast Switching

• Fully Avalanche Rated

• Drop in Replacement of the IRFZ48, SiHFZ48 for

Linear/Audio Applications

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Advanced Power MOSFETs from Vishay utilize advanced

processing

techniques

to

achieve

extremely

low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

accommodating die sizes up to HEX-4. It provides the

highest

power

capability

and

the

lowest

possible

on-resistance in any existing surface mount package. The

its low internal connection resistance and can dissipate up

to 2 W in a typical surface mount application.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. Current limited by the package, (die current = 72 A).

PRODUCT SUMMARY

60

0.018

110

29

36

Configuration

Single

N-Channel MOSFET

G

D

S

G

D

S

G

D

S

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

SiHFZ48RS-GE3

-

Lead (Pb)-free

IRFZ48RSPbF

IRFZ48RLPbF

SiHFZ48RS-E3

SiHFZ48RL-E3

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

± 20

50

A

50

290

Linear Derating Factor

1.3

W/°C

100

mJ

Maximum Power Dissipation

190

W

dV/dt

4.5

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 175

°C

for 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply