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IRFZ48PBF bảng dữ liệu(PDF) 1 Page - Vishay Siliconix |
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1 / 9 page Document Number: 91294 www.vishay.com S11-0518-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET IRFZ48, SiHFZ48 Vishay Siliconix FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Ultra Low On-Resistance • Very Low Thermal Resistance • 175 °C Operating Temperature •Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 22 μH, Rg = 25 Ω IAS = 72 A (see fig. 12). c. ISD ≤ 72 A, dI/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case e. Current limited by the package, (die current = 72 A). PRODUCT SUMMARY VDS (V) 60 RDS(on) ( Ω)VGS = 10 V 0.018 Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single N-Channel MOSFET G D S TO-220AB G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRFZ48PbF SiHFZ48-E3 SnPb IRFZ48 SiHFZ48 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Currente VGS at 10 V TC = 25 °C ID 50 A TC = 100 °C 50 Pulsed Drain Currenta IDM 290 Linear Derating Factor 1.3 W/°C Single Pulse Avalanche Energyb EAS 100 mJ Avalanche Currenta IAR 50 A Repetitive Avalanche Energya EAR 19 mJ Maximum Power Dissipation TC = 25 °C PD 190 W Peak Diode Recovery dV/dtc dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature)d for 10 s 300 Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply |
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