công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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BU1008 bảng dữ liệu(PDF) 2 Page - Vishay Siliconix |
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BU1008 bảng dữ liệu(HTML) 2 Page - Vishay Siliconix |
2 / 6 page New Product BU1006 thru BU1010 Vishay General Semiconductor www.vishay.com For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 89295 Revision: 15-Mar-11 2 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Pulse test: 300 µs pulse width, 1 % duty cycle Notes (1) With 60 W air cooled heatsink (2) Without heatsink, free air RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Maximum instantaneous forward voltage per diode (1) IF = 5.0 A TA = 25 °C TA = 125 °C VF 0.98 0.88 1.05 0.95 V Maximum reverse current per diode rated VR TA = 25 °C TA = 125 °C IR - 64 5.0 250 µA Typical junction capacitance per diode 4.0 V, 1 MHz CJ 43 - pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL BU1006 BU1008 BU1010 UNIT Typical thermal resistance RJC (1) RJA (2) 3.0 20 °C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BU1006-M3/45 4.55 45 20 Tube BU1006-M3/51 4.55 51 250 Paper tray BU10065S-M3/45 4.55 45 20 Tube Figure 1. Derating Curve Output Rectified Current 0 60 120 160 0 2 4 6 8 12 Case Temperature (°C) With Heatsink Sine-Wave, R-Load T C Measured at Device Bottom T C T C 10 20 80 140 40 100 Figure 2. Forward Current Derating Curve 0 1 2 3 4 Ambient Temperature (°C) 0 50 25 75 100 125 150 Without Heatsink Sine-Wave, R-Load Free Air, T A |
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