công cụ tìm kiếm bảng dữ liệu linh kiện điện tử
  Vietnamese  ▼
ALLDATASHEET.VN

X  

FM1608B bảng dữ liệu(PDF) 4 Page - Ramtron International Corporation

tên linh kiện FM1608B
Giải thích chi tiết về linh kiện  64Kb Bytewide 5V F-RAM Memory
Download  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
nhà sản xuất  RAMTRON [Ramtron International Corporation]
Trang chủ  http://www.ramtron.com
Logo RAMTRON - Ramtron International Corporation

FM1608B bảng dữ liệu(HTML) 4 Page - Ramtron International Corporation

  FM1608B Datasheet HTML 1Page - Ramtron International Corporation FM1608B Datasheet HTML 2Page - Ramtron International Corporation FM1608B Datasheet HTML 3Page - Ramtron International Corporation FM1608B Datasheet HTML 4Page - Ramtron International Corporation FM1608B Datasheet HTML 5Page - Ramtron International Corporation FM1608B Datasheet HTML 6Page - Ramtron International Corporation FM1608B Datasheet HTML 7Page - Ramtron International Corporation FM1608B Datasheet HTML 8Page - Ramtron International Corporation FM1608B Datasheet HTML 9Page - Ramtron International Corporation Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 11 page
background image
FM1608B – 64Kb Bytewide 5V F-RAM
Rev. 1.2
Mar. 2011
Page 4 of 11
Precharge Operation
The precharge operation is an internal condition that
prepares the memory for a new access. All memory
cycles consist of a memory access and a precharge.
The precharge is initiated by deasserting the /CE pin
high. It must remain high for at least the minimum
precharge time tPC.
The user determines the beginning of this operation
since a precharge will not begin until /CE rises.
However, the device has a maximum /CE low time
specification that must be satisfied.
Endurance
Internally, a F-RAM operates with a read and restore
mechanism. Therefore, each read and write cycle
involves a change of state. The memory architecture
is based on an array of rows and columns. Each read
or write access causes an endurance cycle for an
entire row. In the FM1608B, a row is 64 bits wide.
Every 8-byte boundary marks the beginning of a new
row. Endurance can be optimized by ensuring
frequently accessed data is located in different rows.
Regardless, F-RAM offers substantially higher write
endurance than other nonvolatile memories.
The
rated endurance limit of 10
12 cycles will allow 3,000
accesses per second to the same row for over 10
years.
F-RAM Design Considerations
When designing with F-RAM for the first time, users
of SRAM will recognize a few minor differences.
First, bytewide F-RAM memories latch each address
on the falling edge of chip enable. This allows the
address bus to change after starting the memory
access. Since every access latches the memory
address on the falling edge of /CE, users cannot
ground it as they might with SRAM.
Users who are modifying existing designs to use F-
RAM should examine the memory controller for
timing compatibility of address and control pins.
Each memory access must be qualified with a low
transition of /CE. In many cases, this is the only
change
required.
An
example
of
the
signal
relationships is shown in Figure 2 below. Also shown
is a common SRAM signal relationship that will not
work for the FM1608B.
The reason for /CE to strobe for each address is two-
fold: it latches the new address and creates the
necessary precharge period while /CE is high.
Valid Strobing of /CE
FRAM
Signaling
CE
Address
A1
A2
Data
D1
D2
Invalid Strobing of /CE
SRAM
Signaling
CE
Address
A1
A2
Data
D1
D2
Figure 2. Chip Enable and Memory Address Relationships


Số phần tương tự - FM1608B

nhà sản xuấttên linh kiệnbảng dữ liệuGiải thích chi tiết về linh kiện
logo
Cypress Semiconductor
FM1608B CYPRESS-FM1608B Datasheet
342Kb / 14P
   64Kb Bytewide 5V F-RAM Memory
FM1608B-SG CYPRESS-FM1608B-SG Datasheet
342Kb / 14P
   64Kb Bytewide 5V F-RAM Memory
More results

Mô tả tương tự - FM1608B

nhà sản xuấttên linh kiệnbảng dữ liệuGiải thích chi tiết về linh kiện
logo
Cypress Semiconductor
FM1608B CYPRESS-FM1608B Datasheet
342Kb / 14P
   64Kb Bytewide 5V F-RAM Memory
FM1808B CYPRESS-FM1808B Datasheet
336Kb / 12P
   256Kb Bytewide 5V F-RAM Memory
logo
Ramtron International C...
FM1808B RAMTRON-FM1808B Datasheet
94Kb / 11P
   256Kb Bytewide 5V F-RAM Memory
logo
Cypress Semiconductor
FM24C64B CYPRESS-FM24C64B_13 Datasheet
352Kb / 15P
   64Kb Serial 5V F-RAM Memory
logo
Ramtron International C...
FM25640B RAMTRON-FM25640B Datasheet
213Kb / 13P
   64Kb Serial 5V F-RAM Memory
FM25640C RAMTRON-FM25640C Datasheet
321Kb / 13P
   64Kb Serial 5V F-RAM Memory
FM24C64B RAMTRON-FM24C64B Datasheet
293Kb / 12P
   64Kb Serial 5V F-RAM Memory
FM24C64C RAMTRON-FM24C64C Datasheet
274Kb / 12P
   64Kb Serial 5V F-RAM Memory
logo
Cypress Semiconductor
FM24C64B CYPRESS-FM24C64B Datasheet
347Kb / 12P
   64Kb Serial 5V F-RAM Memory
FM25640B-G CYPRESS-FM25640B-G Datasheet
441Kb / 13P
   64Kb Serial 5V F-RAM Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11


bảng dữ liệu tải về

Go To PDF Page


Link URL




Chính sách bảo mật
ALLDATASHEET.VN
Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không?  [ DONATE ] 

Alldatasheet là   |   Quảng cáo   |   Liên lạc với chúng tôi   |   Chính sách bảo mật   |   Trao đổi link   |   Tìm kiếm theo nhà sản xuất
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com