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ADS4229IRGCT bảng dữ liệu(PDF) 6 Page - Texas Instruments |
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ADS4229IRGCT bảng dữ liệu(HTML) 6 Page - Texas Instruments |
6 / 67 page ADS4229 SBAS550A – JUNE 2011 – REVISED OCTOBER 2011 www.ti.com ELECTRICAL CHARACTERISTICS: ADS4229 (continued) Typical values are at +25 °C, AVDD = 1.8 V, DRVDD = 1.8 V, 50% clock duty cycle, –1 dBFS differential analog input, LVDS interface, and 0-dB gain, unless otherwise noted. Minimum and maximum values are across the full temperature range: TMIN = –40°C to TMAX = +85°C, AVDD = 1.8 V, and DRVDD = 1.8 V. ADS4229 (250 MSPS) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT 20-MHz full-scale signal on channel under observation; Crosstalk 95 dB 170-MHz full-scale signal on other channel Recovery to within 1% Input overload recovery 1 Clock cycle (of full-scale) for 6 dB overload with sine-wave input AC power-supply rejection PSRR For 50-mVPP signal on AVDD supply, up to 10 MHz 30 dB ratio Effective number of bits ENOB fIN = 170 MHz 11.15 LSBs Differential nonlinearity DNL fIN = 170 MHz –0.8 ±0.5 1.5 LSBs Integrated nonlinearity INL fIN = 170 MHz ±1.8 ±4 LSBs ELECTRICAL CHARACTERISTICS: GENERAL Typical values are at +25 °C, AVDD = 1.8 V, DRVDD = 1.8 V, 50% clock duty cycle, and –1 dBFS differential analog input, unless otherwise noted. Minimum and maximum values are across the full temperature range: TMIN = –40°C to TMAX = +85°C, AVDD = 1.8 V, and DRVDD = 1.8 V. ADS4229 PARAMETER MIN TYP MAX UNIT ANALOG INPUTS Differential input voltage range 2 VPP Differential input resistance (at 200 MHz) 0.75 k Ω Differential input capacitance (at 200 MHz) 3.7 pF Analog input bandwidth 550 MHz (with 50- Ω source impedance, and 50-Ω termination) Analog input common-mode current 1.5 µA/MSPS (per input pin of each channel) Common-mode output voltage VCM 0.95(1) V VCM output current capability 4 mA DC ACCURACY Offset error –15 2.5 15 mV Temperature coefficient of offset error 0.003 mV/ °C Gain error as a result of internal reference inaccuracy alone EGREF –2 2 %FS Gain error of channel alone EGCHAN ±0.1 1 %FS Temperature coefficient of EGCHAN 0.002 Δ%/°C POWER SUPPLY IAVDD 167 190 mA Analog supply current IDRVDD Output buffer supply current 136 160 mA LVDS interface, 350-mV swing with 100- Ω external termination, fIN = 2.5 MHz IDRVDD Output buffer supply current 94 mA CMOS interface, no load capacitance, fIN = 2.5 MHz (2) Analog power 301 mW Digital power 245 mW LVDS interface, 350-mV swing with 100- Ω external termination, fIN = 2.5 MHz Digital power CMOS interface, 8-pF external load capacitance(2) 169 mW fIN = 2.5 MHz Global power-down 25 mW (1) VCM changes to 0.87 V when the HIGH PERF MODE[7:2] serial register bits are set. (2) In CMOS mode, the DRVDD current scales with the sampling frequency, the load capacitance on output pins, input frequency, and the supply voltage (see the CMOS Interface Power Dissipation section in the Application Information). 6 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): ADS4229 |
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