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ADS4229IRGCT bảng dữ liệu(PDF) 6 Page - Texas Instruments

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ADS4229
SBAS550A
– JUNE 2011 – REVISED OCTOBER 2011
www.ti.com
ELECTRICAL CHARACTERISTICS: ADS4229 (continued)
Typical values are at +25
°C, AVDD = 1.8 V, DRVDD = 1.8 V, 50% clock duty cycle, –1 dBFS differential analog input, LVDS
interface, and 0-dB gain, unless otherwise noted. Minimum and maximum values are across the full temperature range:
TMIN = –40°C to TMAX = +85°C, AVDD = 1.8 V, and DRVDD = 1.8 V.
ADS4229 (250 MSPS)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
20-MHz full-scale signal on channel under observation;
Crosstalk
95
dB
170-MHz full-scale signal on other channel
Recovery to within 1%
Input overload recovery
1
Clock cycle
(of full-scale) for 6 dB overload with sine-wave input
AC power-supply rejection
PSRR
For 50-mVPP signal on AVDD supply, up to 10 MHz
30
dB
ratio
Effective number of bits
ENOB
fIN = 170 MHz
11.15
LSBs
Differential nonlinearity
DNL
fIN = 170 MHz
–0.8
±0.5
1.5
LSBs
Integrated nonlinearity
INL
fIN = 170 MHz
±1.8
±4
LSBs
ELECTRICAL CHARACTERISTICS: GENERAL
Typical values are at +25
°C, AVDD = 1.8 V, DRVDD = 1.8 V, 50% clock duty cycle, and –1 dBFS differential analog input,
unless otherwise noted. Minimum and maximum values are across the full temperature range: TMIN = –40°C to TMAX = +85°C,
AVDD = 1.8 V, and DRVDD = 1.8 V.
ADS4229
PARAMETER
MIN
TYP
MAX
UNIT
ANALOG INPUTS
Differential input voltage range
2
VPP
Differential input resistance (at 200 MHz)
0.75
k
Ω
Differential input capacitance (at 200 MHz)
3.7
pF
Analog input bandwidth
550
MHz
(with 50-
Ω source impedance, and 50-Ω termination)
Analog input common-mode current
1.5
µA/MSPS
(per input pin of each channel)
Common-mode output voltage
VCM
0.95(1)
V
VCM output current capability
4
mA
DC ACCURACY
Offset error
–15
2.5
15
mV
Temperature coefficient of offset error
0.003
mV/
°C
Gain error as a result of internal reference inaccuracy alone
EGREF
–2
2
%FS
Gain error of channel alone
EGCHAN
±0.1
1
%FS
Temperature coefficient of EGCHAN
0.002
Δ%/°C
POWER SUPPLY
IAVDD
167
190
mA
Analog supply current
IDRVDD
Output buffer supply current
136
160
mA
LVDS interface, 350-mV swing with 100-
Ω external termination, fIN = 2.5 MHz
IDRVDD
Output buffer supply current
94
mA
CMOS interface, no load capacitance, fIN = 2.5 MHz
(2)
Analog power
301
mW
Digital power
245
mW
LVDS interface, 350-mV swing with 100-
Ω external termination, fIN = 2.5 MHz
Digital power
CMOS interface, 8-pF external load capacitance(2)
169
mW
fIN = 2.5 MHz
Global power-down
25
mW
(1)
VCM changes to 0.87 V when the HIGH PERF MODE[7:2] serial register bits are set.
(2)
In CMOS mode, the DRVDD current scales with the sampling frequency, the load capacitance on output pins, input frequency, and the
supply voltage (see the CMOS Interface Power Dissipation section in the Application Information).
6
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Copyright
© 2011, Texas Instruments Incorporated
Product Folder Link(s): ADS4229


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