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NBXDPA018 bảng dữ liệu(PDF) 3 Page - ON Semiconductor |
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NBXDPA018 bảng dữ liệu(HTML) 3 Page - ON Semiconductor |
3 / 7 page NBXDPA018 http://onsemi.com 3 Table 6. DC CHARACTERISTICS (VDD = 2.5 V ± 5% or VDD = 3.3 V ± 10%, GND = 0 V, TA = −40°C to +85°C) (Note 2) Symbol Characteristic Conditions Min. Typ. Max. Units IDD Power Supply Current 85 105 mA VIH OE and FSEL Input HIGH Voltage 2000 VDD mV VIL OE and FSEL Input LOW Voltage GND − 300 800 mV IIH Input HIGH Current OE FSEL −100 −100 +100 +100 mA IIL Input LOW Current OE FSEL −100 −100 +100 +100 mA DVOD Change in Magnitude of VOD for Complementary Output States (Note 3) 0 1 25 mV VOS Offset Voltage 1125 1375 mV DVOS Change in Magnitude of VOS for Complementary Output States (Note 3) 0 1 25 mV VOH Output HIGH Voltage VDD = 2.5 V VDD = 3.3 V 1425 1600 mV VOL Output LOW Voltage VDD = 2.5 V VDD = 3.3 V 900 1075 mV VOD Differential Output Voltage 250 450 mV NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 2. Measurement taken with outputs terminated with 100 ohm across differential pair. See Figure 5. 3. Parameter guaranteed by design verification not tested in production. |
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