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BD12KA5WF bảng dữ liệu(PDF) 7 Page - Rohm |
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BD12KA5WF bảng dữ liệu(HTML) 7 Page - Rohm |
7 / 10 page BD□□KA5,BD□□KA5W Series,BD00KA5W Series Technical Note 7/9 www.rohm.com 2009.04 - Rev.A © 2009 ROHM Co., Ltd. All rights reserved. ● Other Caution ○ Protection Circuits Over-current Protection Circuit A built-in over-current protection circuit corresponding to the current capacity prevents the destruction of the IC when there are load shorts. This protection circuit is a “7”-shaped current control circuit that is designed such that the current is restricted and does not latch even when a large current momentarily flows through the system with a high-capacitance capacitor. However, while this protection circuit is effective for the prevention of destruction due to unexpected accidents, it is not suitable for continuous operation or transient use. Please be aware when creating thermal designs that the over-current protection circuit has negative current capacity characteristics with regard to temperature. ○ Thermal Shutdown Circuit (Thermal Protection) This system has a built-in temperature protection circuit for the purpose of protecting the IC from thermal damage. As shown in Fig. 20-22, this must be used within the range of acceptable loss, but if the acceptable loss is continuously exceeded, the chip temperature Tj increases, causing the thermal shutdown circuit to operate. When the thermal shutdown circuit operates, the operation of the circuit is suspended. The circuit resumes operation immediately after the chip temperature Tj decreases, so the output repeats the ON and OFF states (Please refer to Figs.12 for the temperatures at which the temperature protection circuit operates). There are cases in which the IC is destroyed due to thermal runaway when it is left in the overloaded state. Be sure to avoid leaving the IC in the overloaded state. ○ Reverse Current In order to prevent the destruction of the IC when a reverse current flows through the IC, it is recommended that a diode be placed between the Vcc and Vo and a pathway be created so that the current can escape (Refer to Fig.27). ○ This IC is BI-CMOS IC that has a P-board (substrate) and P+ isolation between each element, as shown in Fig.28. A P-N junction is formed between this P-layer and the N-layer of each element, and the P-N junction operates as : - a parasitic diode when the electric potential relationship is GND> Terminal A, GND> Terminal B, or - a parasitic transistor when the electric potential relationship is Terminal B > GND> Terminal A. Parasitic elements are structurally inevitable in the IC. The operation of parasitic elements induces mutual interference between circuits, causing malfunctions and eventually the destruction of the IC. Take precaution as not to use the IC in ways that would cause parasitic elements to operate. For example, applying a voltage that is lower than the GND (P-board) to the input terminal. Fig. 28 : Basic structure example Reverse current OUT Vcc CTL GND Fig.27 : Bypass diode GND N P N P+ P+ Parasitic element or transistor (Pin B) B E Transistor (NPN) N P N GND O (Pin A) GND N P+ Resistor Parasitic element P N P P+ N (Pin A) Parasitic element or transistor (Pin B) GND C B E Parasitic element GND |
Số phần tương tự - BD12KA5WF |
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Mô tả tương tự - BD12KA5WF |
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