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BD00D0AWHFP bảng dữ liệu(PDF) 10 Page - Rohm |
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BD00D0AWHFP bảng dữ liệu(HTML) 10 Page - Rohm |
10 / 12 page Technical Note 10/11 www.rohm.com 2011.03 - Rev.A © 2011 ROHM Co., Ltd. All rights reserved. BD00D0AWHFP 17. Positive voltage surges on VCC pin A power zener diode should be inserted between VCC and GND for protection against voltage surges of more than 35V on the VCC pin. 18. Negative voltage surges on VCC pin A schottky barrier diode should be inserted between VCC and GND for protection against voltages lower than GND on the VCC pin. 19. Output protection diode Loads with large inductance components may cause reverse current flow during startup or shutdown. In such cases, a protection diode should be inserted on the output to protect the IC. 20. Regarding input pins of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. PN junctions are formed at the intersection of these P layers with the N layers of other elements, creating parasitic diodes and/or transistors. For example (refer to the figure below): ○ When GND > Pin A and GND > Pin B, the PN junction operates as a parasitic diode ○ When GND > Pin B, the PN junction operates as a parasitic transistor Parasitic diodes occur inevitably in the structure of the IC, and the operation of these parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Accordingly, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided. Vcc GND Example of Simple Monolithic IC Architecture Parasitic elements (Pin A) Parasitic elements or transistors (Pin B) C B E N P N N P+ P+ Parasitic elements or transistors P substrate (Pin B) C B E Transistor (NPN) (Pin A) N P N N P+ P+ Resistor Parasitic elements P GND GND GND N Vcc GND |
Số phần tương tự - BD00D0AWHFP_11 |
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Mô tả tương tự - BD00D0AWHFP_11 |
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