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SS12T3 bảng dữ liệu(PDF) 2 Page - ON Semiconductor

tên linh kiện SS12T3
Giải thích chi tiết về linh kiện  12 V, 3 A, Low VCE(sat) PNP Transistor
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nhà sản xuất  ONSEMI [ON Semiconductor]
Trang chủ  http://www.onsemi.com
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SS12T3 bảng dữ liệu(HTML) 2 Page - ON Semiconductor

  SS12T3 Datasheet HTML 1Page - ON Semiconductor SS12T3 Datasheet HTML 2Page - ON Semiconductor SS12T3 Datasheet HTML 3Page - ON Semiconductor SS12T3 Datasheet HTML 4Page - ON Semiconductor SS12T3 Datasheet HTML 5Page - ON Semiconductor  
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NSS12200WT1G
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
450
3.6
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
275
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
650
5.2
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
192
°C/W
Thermal Resistance,
Junction−to−Lead 6
RqJL
105
°C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
PD Single
1.4
W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to +150
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage, (IC = −10 mAdc, IB = 0)
V(BR)CEO
−12
−15
Vdc
Collector−Base Breakdown Voltage, (IC = −0.1 mAdc, IE = 0)
V(BR)CBO
−12
−25
Vdc
Emitter−Base Breakdown Voltage, (IE = −0.1 mAdc, IC = 0)
V(BR)EBO
−5.0
−7.0
Vdc
Collector Cutoff Current, (VCB = −12 Vdc, IE = 0)
ICBO
−0.02
−0.1
mAdc
Collector−Emitter Cutoff Current, (VCES = −12 Vdc, IE = 0)
ICES
−0.03
−0.1
mAdc
Emitter Cutoff Current, (VCES = −5.0 Vdc, IE = 0)
IEBO
−0.03
−0.1
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = −0.5 A, VCE = −1.5 V)
(IC = −0.8 A, VCE = −1.5 V)
(IC = −1.0 A, VCE = −1.5 V)
hFE
100
100
100
180
165
160
300
Collector−Emitter Saturation Voltage (Note 3)
(IC = −0.5 A, IB = −10 mA)
(IC = −0.8 A, IB = −16 mA)
(IC = −1.0 A, IB = −20 mA)
VCE(sat)
−0.10
−0.14
−0.17
−0.160
−0.235
−0.290
V
Base −Emitter Saturation Voltage (Note 3)
(IC = −1.0 A, IB = −20 mA)
VBE(sat)
−0.84
−0.95
V
Base −Emitter Turn−on Voltage (Note 3)
(IC = −1.0 A, VCE = −1.5 V)
VBE(on)
−0.81
−0.95
V
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
fT
100
MHz
Output Capacitance
(VCB = −1.5 V, f = 1.0 MHz)
Cobo
50
65
pF
1. FR−4, Minimum Pad, 1 oz Coverage.
2. FR−4, 1″ Pad, 1 oz Coverage.
3. Pulsed Condition: Pulse Width < 300 msec, Duty Cycle < 2%.


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