© Semiconductor Components Industries, LLC, 2009

August, 2009 − Rev. 3

1

Publication Order Number:

MMBTH10LT1/D

MMBTH10LT1G,

MMBTH10-4LT1G

VHF/UHF Transistor

NPN Silicon

Features

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

25

Vdc

Collector-Base Voltage

30

Vdc

Emitter-Base Voltage

3.0

Vdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

FR−5 Board (Note 1)

Derate above 25°C

225

1.8

mW

mW/°C

Thermal Resistance,

Junction to Ambient (Note 1)

556

°C/W

Total Device Dissipation

Alumina Substrate (Note 2)

Derate above 25°C

300

2.4

mW

mW/°C

Thermal Resistance,

Junction to Ambient (Note 2)

417

°C/W

Junction and Storage

Temperature Range

−55 to

+150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina

Device

Package

ORDERING INFORMATION

MMBTH10LT1G

SOT−23

(Pb−Free)

3000/Tape &

Reel

MMBTH10−4LT1G

SOT−23

(Pb−Free)

3000/Tape &

Reel

COLLECTOR

3

1

BASE

2

EMITTER

http://onsemi.com

MMBTH10LT3G

SOT−23

(Pb−Free)

10000/Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MARKING DIAGRAMS

SOT−23 (TO−236AB)

CASE 318

STYLE 6

1

2

3

3EM MG

G

MMBTH10LT1G

3E4 MG

G

MMBTH10−04LT1G

3EM, 3E4= Specific Device Code

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.