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MJW3281A bảng dữ liệu(PDF) 2 Page - ON Semiconductor

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Giải thích chi tiết về linh kiện  Complementary NPN-PNP Silicon Power Bipolar Transistors
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MJW3281A (NPN) MJW1302A (PNP)
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2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
230
Vdc
Collector Cutoff Current
(VCB = 230 Vdc, IE = 0)
ICBO
50
mAdc
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
IEBO
5
mAdc
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non−repetitive)
(VCE = 100 Vdc, t = 1 s (non−repetitive)
IS/b
4
1
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5 Vdc)
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 3 Adc, VCE = 5 Vdc)
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 7 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 15 Adc, VCE = 5 Vdc)
hFE
50
50
50
50
50
45
12
125
115
35
200
200
200
200
200
Collector−Emitter Saturation Voltage
(IC = 10 Adc, IB = 1 Adc)
VCE(sat)
0.4
2
Vdc
Base−Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
2
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
fT
30
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
600
pF


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