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MJE4353 bảng dữ liệu(PDF) 1 Page - ON Semiconductor |
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1 / 7 page High−Voltage High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector−Emitter Sustaining Voltage — NPN PNP VCEO(sus) = 160 Vdc — MJE4343 MJE4353 • High DC Current Gain — @ IC = 8.0 Adc hFE = 35 (Typ) • Low Collector−Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 8.0 Adc w These devices are available in Pb−free package(s). Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative. MAXIMUM RATINGS Rating Symbol Max Unit Collector−Emitter Voltage VCEO 160 Vdc Collector−Base Voltage VCB 160 Vdc Emitter−Base Voltage VEB 7.0 Vdc Collector Current — Continuous Peak (1) IC 16 20 Adc Base Current — Continuous IB 5.0 Adc Total Power Dissipation @ TC = 25_C PD 125 Watts Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.0 _C/W (1) Pulse Test: Pulse Width v 5.0 μs, Duty Cycle w 10%. 3.5 0 Figure 1. Power Derating Reference: Ambient Temperature TA, AMBIENT TEMPERATURE (°C) 25 50 100 125 3.0 2.5 0.5 75 150 1.0 1.5 2.0 ON Semiconductor t © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 4 1 Publication Order Number: MJE4343/D MJE4343 MJE4353 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 160 VOLTS NPN PNP CASE 340D−02 TO−218 TYPE |
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