MJ11033 datasheet(1/4 Pages) ONSEMI

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September, 2008 − Rev. 6

1

Publication Order Number:

MJ11028/D

MJ11028, MJ11030,

MJ11032 (NPN)

MJ11029, MJ11033 (PNP)

High-Current

Complementary Silicon

Power Transistors

High−Current Complementary Silicon Power Transistors are for use

as output devices in complementary general purpose amplifier

applications.

Features

• High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc

hFE = 400 (Min) @ IC = 50 Adc

• Curves to 100 A (Pulsed)

• Diode Protection to Rated IC

• Monolithic Construction with Built−In Base−Emitter Shunt Resistor

• Junction Temperature to +200_C

• Pb−Free Packages are Available*

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

MJ11028/29

MJ11030

MJ11032/33

VCEO

60

90

120

Vdc

Collector−Base Voltage

MJ11028/29

MJ11030

MJ11032/33

VCBO

60

90

120

Vdc

Emitter−Base Voltage

VEBO

5.0

Vdc

Collector Current − Continuous

− Peak (Note 1)

IC

50

100

Adc

Base Current − Continuous

IB

2.0

Adc

Total Power Dissipation @ TC = 25°C

Derate Above 25°C @ TC = 100_C

PD

300

1.71

W

W/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

− 55 to +200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Maximum Lead Temperature for

Soldering Purposes for v 10 seconds

TL

275

_C

Thermal Resistance, Junction−to−Case

RqJC

0.58

°C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−204 (TO−3)

CASE 197A

STYLE 1

50 AMPERE

COMPLEMENTARY

DARLINGTON POWER

TRANSISTORS

60 − 120 VOLTS

300 WATTS

MARKING

DIAGRAM

MJ110xx = Device Code

xx = 28, 29, 30, 32, 33

G= Pb−Free Package

A

= Location Code

YY

= Year

WW

= Work Week

MEX

= Country of Orgin

http://onsemi.com

MJ110xxG

AYYWW

MEX

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

COLLECTOR

CASE

BASE

1

EMITTER 2

COLLECTOR

CASE

BASE

1

EMITTER 2

NPN

PNP

MJ11028

MJ11029

MJ11030

MJ11032

MJ11033

2

1

Số phần tương tự - MJ11033

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Mospec Semiconductor	MJ11033	154Kb / 3P	POWER TRANSISTOR(50A,60-120V,300W)
Motorola, Inc	MJ11033	153Kb / 4P	50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS
ON Semiconductor	MJ11033	153Kb / 4P	COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 1995
Wing Shing Computer Com...	MJ11033	21Kb / 1P	PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)
Seme LAB	MJ11033	59Kb / 2P	COMPLEMENTARY DARLINGTON POWER TRANSISTOR

More results

Mô tả tương tự - MJ11033

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
New Jersey Semi-Conduct...	2N5684	206Kb / 2P	HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS
New Jersey Semi-Conduct...	MJ11028	84Kb / 2P	High-Current Complementary Silicon Power Transistors
ON Semiconductor	2N5684	133Kb / 8P	High-Current Complementary Silicon Power Transistors May, 2001 ??Rev. 10
ON Semiconductor	2N5684G	119Kb / 5P	High-Current Complementary Silicon Power Transistors October, 2007 - Rev. 12
New Jersey Semi-Conduct...	MJ14001	121Kb / 2P	High-Current Complementary Silicon Power Transistors
ON Semiconductor	MJ11015	121Kb / 4P	High-Current Complementary Silicon Transistors September, 2008 ??Rev. 5
ON Semiconductor	MJ11012	68Kb / 4P	High-Current Complementary Silicon Transistors May, 2001 ??Rev. 4
NTE Electronics	NTE29	24Kb / 2P	Silicon Complementary Transistors High Power, High Current Switch
	NTE2534	22Kb / 2P	Silicon Complementary Transistors High Current Switch
	NTE2513	22Kb / 2P	Silicon Complementary Transistors High Current Switch

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