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BU323Z bảng dữ liệu(PDF) 4 Page - ON Semiconductor

tên linh kiện BU323Z
Giải thích chi tiết về linh kiện  NPN Silicon Power Darlington
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BU323Z bảng dữ liệu(HTML) 4 Page - ON Semiconductor

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BU323Z
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4
Figure 4. Energy Test Criteria for BU323Z
The shaded area represents the amount of energy the
device can sustain, under given DC biases (IC/IB/VBE(off)/
RBE), without an external clamp; see the test schematic dia-
gram, Figure 2.
The transistor PASSES the Energy test if, for the inductive
load and ICPEAK/IB/VBE(off) biases, the VCE remains outside
the shaded area and greater than the VGATE minimum limit,
Figure 4a.
The transistor FAILS if the VCE is less than the VGATE
(minimum limit) at any point along the VCE/IC curve as
shown on Figures 4b, and 4c. This assures that hot spots and
uncontrolled avalanche are not being generated in the die,
and the transistor is not damaged, thus enabling the sustained
energy level required.
The transistor FAILS if its Collector/Emitter breakdown
voltage is less than the VGATE value, Figure 4d.
ICPEAK
(a)
IC
IC HIGH
IC LOW
VCE
VGATE MIN
ICPEAK
IC
IC HIGH
IC LOW
VCE
VGATE MIN
(b)
ICPEAK
IC
IC HIGH
IC LOW
VCE
VGATE MIN
(c)
ICPEAK
IC
IC HIGH
IC LOW
VCE
VGATE MIN
(d)


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