BC307B datasheet(2/4 Pages) ONSEMI

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BC307B

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = −2.0 mAdc, IB = 0)

V(BR)CEO

−45

−

Vdc

Emitter−Base Breakdown Voltage

(IE = −100 mAdc, IC = 0)

V(BR)EBO

−5.0

−

Vdc

Collector−Emitter Leakage Current

(VCES = −50 V, VBE = 0)

(VCES = −50 V, VBE = 0) TA = 125°C

ICES

−

−0.2

−15

−4.0

nAdc

mA

ON CHARACTERISTICS

DC Current Gain

(IC = −10 mAdc, VCE = −5.0 Vdc)

(IC = −2.0 mAdc, VCE = −5.0 Vdc)

(IC = −100 mAdc, VCE = −5.0 Vdc)

hFE

−

200

−

150

290

180

−

460

−

Collector−Emitter Saturation Voltage

(IC = −10 mAdc, IB = −0.5 mAdc)

(IC = −10 mAdc, IB = see Note 1)

(IC = −100 mAdc, IB = −5.0 mAdc)

VCE(sat)

−

−0.10

−0.30

−0.25

−0.3

−0.6

−

Vdc

Base −Emitter Saturation Voltage

(IC = −10 mAdc, IB = −0.5 mAdc)

(IC = −100 mAdc, IB = −5.0 mAdc)

VBE(sat)

−

−0.7

−1.0

−

Vdc

Base−Emitter On Voltage

(IC = −2.0 mAdc, VCE = −5.0 Vdc)

VBE(on)

−0.55

−0.62

−0.7

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz)

fT

−

280

−

MHz

Common Base Capacitance

(VCB = −10 Vdc, IC = 0, f = 1.0 MHz)

Ccbo

−

6.0

pF

Noise Figure

(IC = −0.2 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz)

NF

−

2.0

10

dB

1. IC = −10 mAdc on the constant base current characteristic, which yields the point IC = −11 mAdc, VCE = −1.0 V.

Số phần tương tự - BC307B

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Motorola, Inc	BC307B	110Kb / 4P	Amplifier Transistors(PNP)
ON Semiconductor	BC307B	84Kb / 4P	Amplifier Transistors(PNP Silicon) 1997 REV 1
NXP Semiconductors	BC307B	52Kb / 8P	PNP general purpose transistors 1997 Mar 07
Fairchild Semiconductor	BC307B	69Kb / 5P	PNP EPITAXIAL SILICON TRANSISTOR
ON Semiconductor	BC307B	54Kb / 4P	Amplifier Transistors PNP Silicon March, 2007 ??Rev. 4

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Mô tả tương tự - BC307B

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