IRF230 datasheet(1/2 Pages) SEME-LAB

tên linh kiện	IRF230

Giải thích chi tiết về linh kiện	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET

Download	2 Pages

Scroll/Zoom	100%

nhà sản xuất	SEME-LAB [Seme LAB]

Trang chủ	http://www.semelab.co.uk

Logo

1 / 2 page

IRF230

Prelim. 6/00

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

VDS

VDGR

ID

IDM

VGS

PD

ILM

EAS*

TJ , TSTG

TL

12

3

(case)

25.15 (0.99)

26.67 (1.05)

10.67 (0.42)

11.18 (0.44)

3.84 (0.151)

4.09 (0.161)

7.92 (0.312)

12.70 (0.50)

6.35 (0.25)

9.15 (0.36)

1.52 (0.06)

3.43 (0.135)

TO–3 (TO–204AA) Package Outline.

Dimensions in mm (inches)

Drain – Source Voltage1

Drain - Gate Voltage (RGS = 20KW)1

Continuous Drain Current@ Tcase = 25°C

Continuous Drain Current@ Tcase = 100°C

Pulsed Drain Current 3

Gate – Source Voltage

Maximum Power Dissipation @ Tcase = 25°C

Derate Linearly

Inductive Current Clamped

Single Pulse Avalanche energy Rating 4

Operating and Storage Junction Temperature Range

Lead Temperature : 0.063” from Case for 10 Sec.

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFET

200

9.0

6.0

36

±20

75

0.6

36

150

–55 to 150

300

V

A

V

W

W/°C

A

mj

°C

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

Pin 1 – Gate

Pin 2 – Source

Case – Drain

NOTES

1 TJ = +25°C to + 150°C

2 Pulse Test PUlse Width # 300

ms. Duty Cycle # 2%

3 Repetitive Ration Pulse Width Limited by Maximum Junction Temperature.

4 VDD = 20V starting TJ = +25°C , L = 3.37mH, RGS = 50W, IPEAK = 9A

Characteristic

Min.

Typ.

Max. Unit

°C/W

1.67

0.1

30

RqJC

RqCS

RqJA

Junction to Case

Case to Sink (Mounting Surface flat, smooth and greased.

Junction to Ambient (Free air operation)

THERMAL CHARACTERISTICS

Số phần tương tự - IRF230

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Samsung semiconductor	IRF230	212Kb / 5P	N-CHANNEL POWER MOSFETS
Fairchild Semiconductor	IRF230	177Kb / 6P	N-Channel Power MOSFETs, 12A, 150-200 V
Intersil Corporation	IRF230	69Kb / 7P	8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs
International Rectifier	IRF230	151Kb / 7P	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
New Jersey Semi-Conduct...	IRF230	106Kb / 3P	N-Channel Power MOSFETs, 12 A, 150-200 V

More results

Mô tả tương tự - IRF230

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Advanced Power Technolo...	APT10M11JVFR	121Kb / 4P	High Voltage N-Channel enhancement mode power MOSFET
	APT10M07JVFR	121Kb / 4P	High Voltage N-Channel enhancement mode power MOSFET
	APT10M11B2VFR	66Kb / 4P	High Voltage N-Channel enhancement mode power MOSFET
IXYS Corporation	IXTU01N100	65Kb / 2P	High Voltage MOSFET N-Channel, Enhancement Mode
Advanced Power Technolo...	APT50M60JN	60Kb / 4P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
	APL501J	114Kb / 4P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
	APL501P	112Kb / 4P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Seme LAB	BFC44	27Kb / 2P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
	SML1001RHN	18Kb / 2P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
	SML100J19	23Kb / 2P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

More results

IRF230 bảng dữ liệu(PDF) 1 Page - Seme LAB

IRF230 bảng dữ liệu(HTML) 1 Page - Seme LAB

Số phần tương tự - IRF230

Mô tả tương tự - IRF230

Html Pages

1 2

bảng dữ liệu tải về

Link URL