PZT3904 datasheet(1/5 Pages) SECOS

tên linh kiện	PZT3904

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PZT3904

NPN Silicon

General Purpose Transistor

RoHS Compliant Product

http://www.SeCoSGmbH.com

Elektronische Bauelemente

FEATURES

Power dissipation

P

CM

:1

W

Tamb=25

Collector current

I CM :0.2 A

Collector-base voltage

V (BR)CBO :6 0 V

Operating and storage junction temperature range

T J

Tstg: -55

to +150

Unit : mm

SOT-223

1.

BASE

2.

COLLECTOR

3.

EMITTER

1

2

3

B

C

E

C

ELECTRICAL

CHARACTERISTICS (Tamb=25

unless

otherwise

specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=10µA,IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=1mA,IB=0

40

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10µA,IC=0

6

V

Collector cut-off current

ICBO

VCB=60V,IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

µA

hFE(1)

VCE=10V,IC=0.1mA

40

hFE(2)

VCE=1V,IC=1mA

70

hFE(3)

VCE=1V,IC=10mA

100

300

hFE(4)

VCE=1V,IC=50mA

60

DC current gain

hFE(5)

VCE=1V,IC=100mA

30

VCE(sat)

IC=10mA,IB=1mA

0.2

V

Collector-emitter saturation voltage

VCE(sat)

IC=50mA,IB=5mA

0.3

V

VBE(sat)

IC=10mA,IB=1mA

0.65

0.85

V

Base-emitter saturation voltage

VBE(sat)

IC=50mA,IB=5mA

0.95

V

Transition frequency

fT

VCE=20V,IC=10mA,f=100MHz

300

MHz

Collector output capacitance

Cob

VCB=5V,IE=0,f=1MHz

4

pF

Noise figure

NF

VCE=5V,Ic=0.1mA,

f=10HZ to 15.7KHz,Rg=1K

5

dB

Delay time

td

35

nS

Rise time

tr

VCC=3V,

IC=10mA,VBE(off)=0.5V,IB1=1mA

35

nS

Storage time

tS

200

nS

Fall time

tf

VCC=3V, IC=10mA

IB1= IB2= 1mA

50

nS

01-Jun-2002 Rev. A

Page 1 of 5

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