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PZT158 bảng dữ liệu(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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PZT158 bảng dữ liệu(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Any changing of specification will not be informed individual PZT158 NPN Transistor Silicon Planar High Current Transistor RoHS Compliant Product http://www.SeCoSGmbH.com Elektronische Bauelemente The PZT158 is designed for general purpose switching and amplifier applications. Description * 6Amps Continous Current, Up To 20Amps Peak Current * Excellent Gain Characteristic, Specified Up To 10Amps * Very Low Saturation Voltages Features ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified MAXIMUM RATINGS* (Tamb =25 , unless otherwise specified) C o Symbol Parameter Value Collector Current (DC) 20 IC Tstg TJ, Junction and Total Power Dissipation VEBO PD Emitter-Base Voltage 6 3 V A W Storage Temperature -55~-150 C O VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 150 V Units Collector Current (Pulse) 6 SOT-223 01-Jun-2002 Rev. A Page 1 of 2 REF. Min. Max. REF. Min. Max. A 6.70 7.30 B 13 C TYP. C 2.90 3.10 J 2.30 REF. D 0.02 0.10 1 6.30 6.70 E 0 C 10 C 2 6.30 6.70 I 0.60 0.80 3 3.30 3.70 H 0.25 0.35 4 3.30 3.70 5 1.40 1.80 1 5 8 Date Code B C E *The power which can be dissipated assuming the device is mounted in a typical on a P.C.B. with copper equal to 4 square inch min.. Parameter Symbol Min Typ. Max Uni Test Conditions Collector-Base Breakdown Voltage BVCBO 150 - - V IC= 100µA, IE=0 IC= 10mA, IB=0 IE= 100µA, IC=0 VCB= 120V, IE=0 VCES=60V VEB= 6V, IC=0 IC= 100mA, IB= 5mA IC= 1A, IB= 50mA IC= 2A, IB= 50mA IC= 6A, IB= 300mA IC= 6A, IB= 300mA VCE= 1V, IC= 6A VCE= 1V, IC= 10mA VCE= 1V, IC= 2A VCE= 1V, IC= 5A VCE= 1V, IC= 10A VCE= 10V, IC= 100mA, VCB= 10V, IE=0, f=1MHz , f=50MHz VCC=10V,IC=1A,IB1=IB2=100mA *BVCEO 60 - - V BVEBO 6 - - V ICBO - - 50 nA ICES - - 50 nA IEBO - - 10 nA *VCE(sat)1 - 50 *VCE(sat)2 - 100 mV *VCE(sat)3 - 170 *VCE(sat)4 - 375 *VBE(sat) - 1.2 V *VBE(on) - 1.15 V *hFE1 100 - *hFE2 100 200 300 *hFE3 75 - *hFE4 25 - fT - 130 - MH Cob - 45 - pF Ton Toff - - - 45 1100 - - - - - - - - - - z nS Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base Saturation Voltage Base-Emitter Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance On-Time Off-Time C o *Measured under pulse condition. Pulse width 300 s, Duty Cycle 2% Spice parameter data is available upon request for this device. |
Số phần tương tự - PZT158 |
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Mô tả tương tự - PZT158 |
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