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PZT158 bảng dữ liệu(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

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Giải thích chi tiết về linh kiện  Silicon Planar High Current Transistor
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PZT158 bảng dữ liệu(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Any changing of specification will not be informed individual
PZT158
NPN Transistor
Silicon Planar High Current Transistor
RoHS Compliant Product
http://www.SeCoSGmbH.com
Elektronische Bauelemente
The PZT158 is designed for general
purpose switching and amplifier
applications.
Description
* 6Amps Continous Current, Up To
20Amps Peak Current
* Excellent Gain Characteristic,
Specified Up To 10Amps
* Very Low Saturation Voltages
Features
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
MAXIMUM RATINGS* (Tamb =25 , unless otherwise specified)
C
o
Symbol
Parameter
Value
Collector Current (DC)
20
IC
Tstg
TJ,
Junction and
Total Power Dissipation
VEBO
PD
Emitter-Base Voltage
6
3
V
A
W
Storage Temperature
-55~-150
C
O
VCEO
Collector-Emitter Voltage
60
V
VCBO
Collector-Base Voltage
150
V
Units
Collector Current (Pulse)
6
SOT-223
01-Jun-2002 Rev. A
Page 1 of 2
REF.
Min.
Max.
REF.
Min.
Max.
A
6.70
7.30
B
13 C
TYP.
C
2.90
3.10
J
2.30 REF.
D
0.02
0.10
1
6.30
6.70
E
0 C
10 C
2
6.30
6.70
I
0.60
0.80
3
3.30
3.70
H
0.25
0.35
4
3.30
3.70
5
1.40
1.80
1 5 8
Date Code
B
C
E
*The power which can be dissipated assuming the device is mounted in a typical on a P.C.B. with copper equal to 4 square inch min..
Parameter
Symbol
Min
Typ.
Max
Uni Test Conditions
Collector-Base Breakdown Voltage
BVCBO
150
-
-
V
IC= 100µA, IE=0
IC= 10mA, IB=0
IE= 100µA, IC=0
VCB= 120V, IE=0
VCES=60V
VEB= 6V, IC=0
IC= 100mA, IB= 5mA
IC= 1A, IB= 50mA
IC= 2A, IB= 50mA
IC= 6A, IB= 300mA
IC= 6A, IB= 300mA
VCE= 1V, IC= 6A
VCE= 1V, IC= 10mA
VCE= 1V, IC= 2A
VCE= 1V, IC= 5A
VCE= 1V, IC= 10A
VCE= 10V, IC= 100mA,
VCB= 10V, IE=0, f=1MHz
, f=50MHz
VCC=10V,IC=1A,IB1=IB2=100mA
*BVCEO
60
-
-
V
BVEBO
6
-
-
V
ICBO
-
-
50
nA
ICES
-
-
50
nA
IEBO
-
-
10
nA
*VCE(sat)1
-
50
*VCE(sat)2
-
100
mV
*VCE(sat)3
-
170
*VCE(sat)4
-
375
*VBE(sat)
-
1.2
V
*VBE(on)
-
1.15
V
*hFE1
100
-
*hFE2
100
200
300
*hFE3
75
-
*hFE4
25
-
fT
-
130
-
MH
Cob
-
45
-
pF
Ton
Toff
-
-
-
45
1100
-
-
-
-
-
-
-
-
-
-
z
nS
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
On-Time
Off-Time
C
o
*Measured under pulse condition. Pulse width 300 s, Duty Cycle 2%
Spice parameter data is available upon request for this device.


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