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2SC2216 bảng dữ liệu(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC2216 bảng dữ liệu(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page 2SC2216 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 17-Feb-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C E K F D B G H J Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Amplifier dissipation NPN Silicon ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 45 V Emitter to Base Voltage VEBO 4 V Collector Current - Continuous IC 50 mA Collector Power Dissipation PC 300 mW Junction, Storage Temperature TJ, TSTG 125, -55~125 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 50 - - V IC=100μA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 45 - - V IC=10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 4 - - V IE=100μA, IC=0 Collector Cut – Off Current ICBO - - 0.1 μA VCB=50V, IE=0 Emitter Cut – Off Current IEBO - - 0.1 μA VEB=3V, IC=0 DC Current Gain hFE 40 - 140 VCE=12.5V, IC=12.5mA Collector to Emitter Saturation Voltage VCE(sat) - - 0.2 V IC=15mA, IB=1.5mA Base to Emitter voltage VBE(sat) - - 1.5 V IC=15mA, IB=1.5mA Transition Frequency fT 300 - - MHz VCE=12.5V, IC=12.5mA Collector Output Capacitance Cob - - 2 pF VCB=10V, IE=0, f=30MHz Base Emitter Collector TO-92 REF. Millimeter Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 |
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