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MCF51QM128 bảng dữ liệu(PDF) 27 Page - Freescale Semiconductor, Inc |
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MCF51QM128 bảng dữ liệu(HTML) 27 Page - Freescale Semiconductor, Inc |
27 / 69 page Table 17. NVM program/erase timing specifications (continued) Symbol Description Min. Typ. Max. Unit Notes thversscr Sector Erase high-voltage time — 20 100 ms 1 thversblk32k Erase Block high-voltage time for 32 KB — 20 100 ms 1 thversblk128k Erase Block high-voltage time for 128 KB — 80 400 ms 1 1. Maximum time based on expectations at cycling end-of-life. 6.4.1.2 Flash timing specifications — commands Table 18. Flash command timing specifications Symbol Description Min. Typ. Max. Unit Notes trd1blk32k trd1blk128k Read 1s Block execution time • 32 KB data flash • 128 KB data flash — — — — 0.4 1.4 ms ms trd1sec1k Read 1s Section execution time (flash sector) — — 40 μs 1 tpgmchk Program Check execution time — — 35 μs 1 trdrsrc Read Resource execution time — — 35 μs 1 tpgm4 Program Longword execution time — 50 TBD μs tersblk32k tersblk128k Erase Flash Block execution time • 32 KB data flash • 128 KB data flash — — 20 80 100 400 ms ms 2 tersscr Erase Flash Sector execution time — 20 100 ms 2 tpgmsec512 tpgmsec1k Program Section execution time • 512 B flash • 1 KB flash — — TBD TBD TBD TBD ms ms trd1all Read 1s All Blocks execution time — — 1.8 ms trdonce Read Once execution time — — 35 μs 1 tpgmonce Program Once execution time — 50 TBD μs tersall Erase All Blocks execution time — 100 500 ms 2 tvfykey Verify Backdoor Access Key execution time — — 35 μs 1 tpgmpart32k Program Partition for EEPROM execution time • 32 KB FlexNVM — 25 TBD ms tsetram8k tsetram32k Set FlexRAM Function execution time: • 8 KB EEPROM backup • 32 KB EEPROM backup — — TBD TBD TBD TBD ms ms Byte-write to FlexRAM for EEPROM operation Table continues on the next page... Memories and memory interfaces MCF51QM128 Advance Information Data Sheet, Rev. 2, 05/2011. Freescale Semiconductor, Inc. Preliminary 27 |
Số phần tương tự - MCF51QM128 |
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Mô tả tương tự - MCF51QM128 |
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