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MCF51QM128 bảng dữ liệu(PDF) 27 Page - Freescale Semiconductor, Inc

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Giải thích chi tiết về linh kiện  Advance Information Temperature range (ambient): -40째C to 105째C
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Table 17. NVM program/erase timing specifications (continued)
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
thversscr
Sector Erase high-voltage time
20
100
ms
1
thversblk32k Erase Block high-voltage time for 32 KB
20
100
ms
1
thversblk128k Erase Block high-voltage time for 128 KB
80
400
ms
1
1. Maximum time based on expectations at cycling end-of-life.
6.4.1.2 Flash timing specifications — commands
Table 18. Flash command timing specifications
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
trd1blk32k
trd1blk128k
Read 1s Block execution time
• 32 KB data flash
• 128 KB data flash
0.4
1.4
ms
ms
trd1sec1k
Read 1s Section execution time (flash sector)
40
μs
1
tpgmchk
Program Check execution time
35
μs
1
trdrsrc
Read Resource execution time
35
μs
1
tpgm4
Program Longword execution time
50
TBD
μs
tersblk32k
tersblk128k
Erase Flash Block execution time
• 32 KB data flash
• 128 KB data flash
20
80
100
400
ms
ms
2
tersscr
Erase Flash Sector execution time
20
100
ms
2
tpgmsec512
tpgmsec1k
Program Section execution time
• 512 B flash
• 1 KB flash
TBD
TBD
TBD
TBD
ms
ms
trd1all
Read 1s All Blocks execution time
1.8
ms
trdonce
Read Once execution time
35
μs
1
tpgmonce
Program Once execution time
50
TBD
μs
tersall
Erase All Blocks execution time
100
500
ms
2
tvfykey
Verify Backdoor Access Key execution time
35
μs
1
tpgmpart32k
Program Partition for EEPROM execution time
• 32 KB FlexNVM
25
TBD
ms
tsetram8k
tsetram32k
Set FlexRAM Function execution time:
• 8 KB EEPROM backup
• 32 KB EEPROM backup
TBD
TBD
TBD
TBD
ms
ms
Byte-write to FlexRAM for EEPROM operation
Table continues on the next page...
Memories and memory interfaces
MCF51QM128 Advance Information Data Sheet, Rev. 2, 05/2011.
Freescale Semiconductor, Inc.
Preliminary
27


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