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2 / 7 page 3N70 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 7 www.unisonic.com.tw QW-R502-282,D ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 3.0 A Continuous Drain Current ID 3.0 A Pulsed Drain Current (Note 2) IDM 12 A Single Pulsed (Note 3) EAS 200 mJ Avalanche Energy Repetitive (Note 2) EAR 7.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 50 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 64mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤3.0A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA 110 °C/W Junction to Case θJC 2.5 °C/W ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250μA 700 V Drain-Source Leakage Current IDSS VDS = 700 V, VGS = 0 V 10 μA Forward VGS = 30 V, VDS = 0 V 100 nA Gate-Source Leakage Current Reverse IGSS VGS = -30 V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient BV △ DSS/△TJ ID = 250μA, Referenced to 25°C 0.6 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 1.5A 2.8 4.0 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 350 450 pF Output Capacitance COSS 50 65 pF Reverse Transfer Capacitance CRSS VDS = 25 V, VGS = 0 V, f = 1MHz 5.5 32 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 10 40 ns Turn-On Rise Time tR 30 70 ns Turn-Off Delay Time tD(OFF) 20 100 ns Turn-Off Fall Time tF VDD = 30V, ID = 1.0 A, RG = 25Ω (Note 1, 2) 30 70 ns Total Gate Charge QG 10 13 nC Gate-Source Charge QGS 2.7 nC Gate-Drain Charge QDD VDS= 480V,ID= 3.0A, VGS= 10 V (Note 1, 2) 4.9 nC |
Số phần tương tự - 3N70L-TN3-R |
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Mô tả tương tự - 3N70L-TN3-R |
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