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MCH3409 bảng dữ liệu(PDF) 1 Page - Sanyo Semicon Device |
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1 / 4 page MCH3409 No.6911-1/4 Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENN6911 MCH3409 Package Dimensions unit : mm 2167 [MCH3409] 11801 TS IM TA-3049 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 2.0 0.65 0.3 12 3 0.15 Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID 2.0 A Drain Current (Pulse) IDP PW ≤10µs, duty cycle≤1% 8.0 A Allowable Power Dissipation PD Mounted on a ceramic board (900mm2!0.8mm) 0.9 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 20 V Zero-Gate Voltage Drain Current IDSS VDS=20V, VGS=0 1 µA Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0 ±10 µA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V Forward Transfer Admittance yfs VDS=10V, ID=1A 2.4 3.5 S RDS(on)1 ID=1A, VGS=4V 100 130 m Ω Static Drain-to-Source On-State Resistance RDS(on)2 ID=0.5A, VGS=2.5V 130 180 m Ω Marking : KJ Continued on next page. Preliminary |
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