BF1102_00 datasheet(4/16 Pages) NXP

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4 / 16 page

2000 Apr 11

4

Philips Semiconductors

Product speciﬁcation

Dual N-channel dual gate MOS-FETs

BF1102; BF1102R

STATIC CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. RG1 connects gate 1 to VGG =5V.

DYNAMIC CHARACTERISTICS

Common source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID = 15 mA; unless otherwise speciﬁed.

Notes

1. Not used MOS-FET: VG1-S = 0; VDS =0.

2. Gate 2 capacitance of both MOS-FETs.

3. Measured in test circuit of Fig.20.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per MOS-FET unless otherwise speciﬁed

V(BR)DSS

drain-source breakdown voltage

VG1-S =VG2-S = 0; ID =10 µA7

−

V

V(BR)G1-SS

gate 1-source breakdown voltage

VGS =VDS = 0; IG1-S =10mA

6

15

V

V(BR)G2-SS

gate 2-source breakdown voltage

VGS =VDS = 0; IG2-S =5mA

6

15

V

V(F)S-G1

forward source-gate 1 voltage

VG2-S =VDS = 0; IS-G1 = 10 mA

0.5

1.5

V

V(F)S-G2

forward source-gate 2 voltage

VG1-S =VDS = 0; IS-G2 = 10 mA

0.5

1.5

V

VG1-S(th)

gate 1-source threshold voltage

VDS =5V; VG2-S =4V; ID = 100 µA

0.3

1

V

VG2-S(th)

gate 2-source threshold voltage

VDS =5V; VG1-S =4V; ID = 100 µA

0.3

1.2

V

IDSX

drain-source current

VG2-S =4V; VDS =5V; RG = 120 kΩ; note 1

12

20

mA

IG1-S

gate 1 cut-off current

VG1-S =5V; VG2-S =VDS =0

−

50

nA

IG2-S

gate 2 cut-off current

VG2-S =5V; VG1-S =VDS =0

−

20

nA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per MOS-FET unless otherwise speciﬁed (note 1)

yfs

forward transfer admittance

Tj =25 °C

364350mS

Cig1-ss

input capacitance at gate 1

f = 1 MHz

2

2.8

3.6

pF

Cig2-ss

input capacitance at gate 2

f = 1 MHz; (note 2)

−−

7pF

Coss

output capacitance

f = 1 MHz

−

1.6

2.5

pF

Crss

reverse transfer capacitance

f = 1 MHz

−

30

50

fF

F

noise ﬁgure

f = 800 MHz; YS =YS opt

−

2

2.8

dB

Xmod

cross-modulation

fw = 50 MHz; funw = 60 MHz; (note 3)

input level for k = 1% at 0 dB AGC

85

−−

dB

µV

input level for k = 1% at 40 dB AGC

100

−−

dB

µV

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