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BF1102 bảng dữ liệu(PDF) 4 Page - NXP Semiconductors |
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BF1102 bảng dữ liệu(HTML) 4 Page - NXP Semiconductors |
4 / 16 page 2000 Apr 11 4 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FETs BF1102; BF1102R STATIC CHARACTERISTICS Tj =25 °C unless otherwise specified. Note 1. RG1 connects gate 1 to VGG =5V. DYNAMIC CHARACTERISTICS Common source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID = 15 mA; unless otherwise specified. Notes 1. Not used MOS-FET: VG1-S = 0; VDS =0. 2. Gate 2 capacitance of both MOS-FETs. 3. Measured in test circuit of Fig.20. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per MOS-FET unless otherwise specified V(BR)DSS drain-source breakdown voltage VG1-S =VG2-S = 0; ID =10 µA7 − V V(BR)G1-SS gate 1-source breakdown voltage VGS =VDS = 0; IG1-S =10mA 6 15 V V(BR)G2-SS gate 2-source breakdown voltage VGS =VDS = 0; IG2-S =5mA 6 15 V V(F)S-G1 forward source-gate 1 voltage VG2-S =VDS = 0; IS-G1 = 10 mA 0.5 1.5 V V(F)S-G2 forward source-gate 2 voltage VG1-S =VDS = 0; IS-G2 = 10 mA 0.5 1.5 V VG1-S(th) gate 1-source threshold voltage VDS =5V; VG2-S =4V; ID = 100 µA 0.3 1 V VG2-S(th) gate 2-source threshold voltage VDS =5V; VG1-S =4V; ID = 100 µA 0.3 1.2 V IDSX drain-source current VG2-S =4V; VDS =5V; RG = 120 kΩ; note 1 12 20 mA IG1-S gate 1 cut-off current VG1-S =5V; VG2-S =VDS =0 − 50 nA IG2-S gate 2 cut-off current VG2-S =5V; VG1-S =VDS =0 − 20 nA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per MOS-FET unless otherwise specified (note 1) yfs forward transfer admittance Tj =25 °C 364350mS Cig1-ss input capacitance at gate 1 f = 1 MHz 2 2.8 3.6 pF Cig2-ss input capacitance at gate 2 f = 1 MHz; (note 2) −− 7pF Coss output capacitance f = 1 MHz − 1.6 2.5 pF Crss reverse transfer capacitance f = 1 MHz − 30 50 fF F noise figure f = 800 MHz; YS =YS opt − 2 2.8 dB Xmod cross-modulation fw = 50 MHz; funw = 60 MHz; (note 3) input level for k = 1% at 0 dB AGC 85 −− dB µV input level for k = 1% at 40 dB AGC 100 −− dB µV |
Số phần tương tự - BF1102_00 |
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Mô tả tương tự - BF1102_00 |
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