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2SD1140 bảng dữ liệu(PDF) 2 Page - Toshiba Semiconductor |
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2SD1140 bảng dữ liệu(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SD1140 2009-12-21 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 30 V, IE = 0 ― ― 10 μA Emitter cut-off current IEBO VEB = 10 V, IC = 0 ― ― 10 μA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 30 ― ― V DC current gain hFE VCE = 2 V, IC = 150 mA 4000 ― ― Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 1 mA ― ― 1.5 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 1 mA ― ― 2.2 V Turn-on time ton ― 0.2 ― Storage time tstg ― 0.6 ― Switching time Fall time tf IB1 = 1 mA,IB2 = 1 mA duty cycle ≤ 1% ― 0.3 ― μs Marking Note2: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. D1140 Lot No. Note2 Part No. (or abbreviation code) 20 μs Input VCC = 15 V Output |
Số phần tương tự - 2SD1140_09 |
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Mô tả tương tự - 2SD1140_09 |
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