STW24NK55Z datasheet(4/12 Pages) STMICROELECTRONICS

tên linh kiện	STW24NK55Z

Giải thích chi tiết về linh kiện	N-channel 550 V - 0.18 廓 - 23 A - TO-247 Zener-protected SuperMESH??Power MOSFET

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Electrical characteristics

STW24NK55Z

4/12

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

550

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125 °C

1

50

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

±

10

µA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 100 µA

33.75

4.5

V

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 11.5 A

0.18

0.22

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: pulse duration=300 µs, duty cycle 1.5%

Forward transconductance

VDS =15 V, ID = 11.5 A

20

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz,

VGS=0

4397.5

480.5

116

pF

Coss eq

(2)

.

2.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS=0, VDS =0 to 480 V

250

pF

RG

Intrinsic gate resistance

f=1 MHz, open drain

2.3

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD= 440 V, ID = 23 A

VGS =10 V

(see Figure 15)

130

25

76

nC

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD= 275 V, ID=11.5 A,

RG= 4.7 Ω, VGS=10 V

(see Figure 14)

30

35

136

88

ns

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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