STPS60170C datasheet(4/6 Pages) STMICROELECTRONICS

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STPS60170C

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Figure 7: Reverse leakage current versus

reverse voltage applied (typical values, per

diode)

Figure 8: Junction capacitance versus reverse

voltage applied (typical values, per diode)

Figure 9: Forward voltage drop versus forward

current (per diode, low level)

Figure

10: Forward voltage drop versus

forward current (per diode, high level)

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

0

10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170

I

R(µA)

T

j=150°C

T

j=125°C

T

j=25°C

T

j=100°C

T

j=75°C

T

j=50°C

VR(V)

C(pF)

100

1000

10000

1

10

100

1000

F=1MHz

V

OSC=30mVRMS

T

j=25°C

VR(V)

I

FM(A)

0

5

10

15

20

25

30

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Tj=25°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Typical values)

Tj=125°C

(Typical values)

VFM(V)

I

FM(A)

1

10

100

1000

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6

Tj=25°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Typical values)

Tj=125°C

(Typical values)

VFM(V)

Số phần tương tự - STPS60170C

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Inchange Semiconductor ...	STPS60170CT	262Kb / 2P	Schottky Barrier Rectifier

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Mô tả tương tự - STPS60170C

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Gamma Microelectronics ...	GMR20H200C	135Kb / 6P	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
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