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STPS3045CT/CG/CR/CP/CPI/CW/CFP
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0
20
40
60
80
100
120
1.E-03
1.E-02
1.E-01
1.E+00
I (A)
M
IM
t
δ=0.5
t(s)
TO-220FPAB
T =75°C
C
T =100°C
C
T =125°C
C
Fig. 5-3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
Z/R
th(j-c)
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t (s)
p
T
δ=tp/T
tp
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
TO-220FPAB
Fig. 6-2: Relative variation of thermal transient
impedance junction to case versus pulse duration.
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
0
5
10
15
20
25
30
35
40
45
I (µA)
R
V (V)
R
T =150°C
j
T =125°C
j
T =100°C
j
T =75°C
j
T =50°C
j
T =25°C
j
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
C(nF)
100
1000
10000
1
10
100
V (V)
R
F=1MHz
V
=30mV
T =25°C
OSC
RMS
j
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
I
(A)
FM
1
10
100
1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V
(V)
FM
T =125°C
(maximum values)
j
T =125°C
(typical values)
j
T =25°C
(maximum values)
j
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
Z/R
th(j-c)
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
t (s)
p
T
δ=tp/T
tp
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
TO-220AB, I PAK, D PAK, SOT-93, TOP-3I, TO-247
22
Fig. 6-1: Relative variation of thermal transient
impedance junction to case versus pulse duration.