STD6N52K3 datasheet(5/12 Pages) STMICROELECTRONICS

tên linh kiện	STD6N52K3

Giải thích chi tiết về linh kiện	N-channel 525 V, 1 廓, 5 A, DPAK, TO-220FP SuperMESH3??Power MOSFET

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STD6N52K3 - STF6N52K3

Electrical characteristics

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Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

6.3

25

A

VSD

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 5 A, VGS = 0

1.6

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 5 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 7)

TBD

ns

nC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 5 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see

Figure 7)

TBD

ns

nC

A

Table 9.

Gate-source Zener diode

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

BVGSO

(1)

1.

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components

Gate-source breakdown

voltage

Igs=± 1 mA (open drain)

30

V

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STD6N52K3	1Mb / 22P	Extremely high dv/dt capability March 2011 Rev 2

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STB7N52K3	380Kb / 15P	N-channel 525 V, 0.84 廓, 6.3 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3??Power MOSFET
List of Unclassifed Man...	STU5N52K3	1Mb / 23P	N-channel 525 V, 1.2 廓, 4.4 A SuperMESH3??Power MOSFET D짼PAK, DPAK, TO-220FP, TO-220, IPAK
STMicroelectronics	STB7N52K3	1Mb / 18P	N-channel 525 V, 0.84 OHM, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET
	STD4N52K3	1Mb / 21P	N-channel 525 V, 2.5 A, 2.1 廓 typ., SuperMESH3??Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
	STF3LN62K3	1Mb / 21P	N-channel 620 V, 2.5 廓 , 2.5 A SuperMESH3??Power MOSFET DPAK, TO-220FP, TO-220, IPAK February 2011 Rev 1
	STD6N62K3	433Kb / 17P	N-channel 620 V, 1.1 廓, 5.5 A, IPAK, DPAK, TO-220,TO-220FP SuperMESH3??Power MOSFET
	STP4N52K3	1Mb / 2P	N-channel 525 V, 2.5 A, 2.1typ., SuperMESH3 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages February 2013 Rev 2
	STB3N62K3	567Kb / 19P	N-channel 620 V, 2.2 廓 , 2.7 A SuperMESH3??Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK
STATEK CORPORATION	STD3LN62K3	1Mb / 21P	N-channel 620 V, 2.5 廓 , 2.5 A SuperMESH3??Power MOSFE DPAK, TO-220FP, TO-220, IPAK
STMicroelectronics	STD5N52U	943Kb / 18P	N-channel 525 V, 1.28 ohm, 4.4 A, DPAK, TO-220FP, I2PAK UltraFASTmesh Power MOSFET

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