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1N5711 bảng dữ liệu(PDF) 1 Page - EIC discrete Semiconductors |
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1N5711 bảng dữ liệu(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page 1N5711 and 1N6263 SCHOTTKY BARRIER DIODES VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. • This diode is also available in the MiniMELF case with type designation LL5711 and LL6263. • Pb / RoHS Free MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified. Symbol Value Unit 1N5711 70 1N6263 60 Power Dissipation (Infinite Heatsink) PD 400 (1) mW Maximum Single Cycle Surge 10 µs Square Wave IFSM 2 A Thermal Resistance Junction to Ambient Air RθJA 0.3 (1) °C/mW Junction Temperature TJ 125 (1) °C Storage temperature range TS -55 to + 150 (1) °C Electrical Characteristics (T J = 25°C unless otherwise noted) Parameter Symbol Min Typ Max Unit 1N5711 IR = 10 µA 70 - - 1N6263 60 - - Reverse Current IR VR = 50 V - - 200 nA IF = 1mA - - 0.41 IF = 15mA - - 1.0 1N5711 - - 2.0 1N6263 - - 2.2 IF = IR = 5mA, recover to 0.1IR Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.. Page 1 of 2 Rev. 02 : March 24, 2005 Parameter Repetitive Peak Reverse Voltage VRRM V Reverse Breakdown Voltage V(BR)R Forward Voltage Drop V V Test Condition - - Diode Capacitance Reverse Recovery Time VF Cd Trr pF ns 1 VR = 0 V, f = 1MHz DO - 35 Glass (DO-204AH) 0.079(2.0 )max. 0.150 (3.8) max. 0.020 (0.52)max. Dimensions in inches and ( millimeters ) 1.00 (25.4) min. 1.00 (25.4) min. Cathode Mark |
Số phần tương tự - 1N5711 |
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Mô tả tương tự - 1N5711 |
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