PESD3V3X1BL_1

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 01 — 6 January 2009

6 of 11

NXP Semiconductors

PESD3V3X1BL

Ultra low capacitance bidirectional ESD protection diode

7.

Application information

The PESD3V3X1BL is designed for the protection of one bidirectional data or signal line

from the damage caused by ESD. The device may be used on lines where the signal

polarities are both, positive and negative with respect to ground.

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD and Electrical Fast

Transient (EFT). The following guidelines are recommended:

1. Place the device as close to the input terminal or connector as possible.

2. The path length between the device and the protected line should be minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and

ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should be used whenever possible. For multilayer PCBs, use ground

vias.

8.

Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard

Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

Fig 5.

Application diagram

006aab250

DUT

GND

line to be protected