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BUK952R4-40C bảng dữ liệu(PDF) 6 Page - NXP Semiconductors |
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6 / 13 page BUK952R4-40C_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 11 April 2008 6 of 13 NXP Semiconductors BUK952R4-40C N-channel TrenchMOS logic level FET IGSS gate leakage current VDS =0V; VGS =15V; Tj =25 °C - 2 100 nA VDS =0V; VGS =-15 V; Tj =25 °C -2 100 nA RDSon drain-source on-state resistance VGS =4.5 V; ID =25A; Tj =25 °C- - 2.7 m Ω VGS =10V; ID =25A; Tj =25 °C- 1.8 2.1 m Ω VGS =5V; ID =25A; Tj = 175 °C; see Figure 11 -- 4.6 m Ω VGS =5V; ID =25A; Tj =25 °C; see Figure 12, 11 and 13 -2.1 2.4 m Ω Source-drain diode VSD source-drain voltage IS =25A; VGS =0V; Tj =25 °C; see Figure 16 -0.85 1.2 V trr reverse recovery time IS =25A; dIS/dt = 100 A/μs; VGS =0V; VDS =30V -70 - ns Qr recovered charge - 60 - nC Dynamic characteristics QG(tot) total gate charge ID =25A; VDS =32V; VGS =5V; see Figure 14 -120 -nC QGS gate-source charge - 30 - nC QGD gate-drain charge - 73 - nC Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; Tj =25 °C; see Figure 15 - 12487 16700 pF Coss output capacitance - 1323 1600 pF Crss reverse transfer capacitance - 938 1290 pF td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =5V; RG(ext) =10 Ω -130 -ns tr rise time - 310 - ns td(off) turn-off delay time - 380 - ns tf fall time - 250 - ns LD internal drain inductance from contact screw on mounting base to centre of die -3.5 -nH from drain lead 6 mm from package to centre of die -4.5 -nH LS internal source inductance from source lead to source bond pad -7.5 -nH Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit |
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