công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
BUK754R3-75C bảng dữ liệu(PDF) 2 Page - NXP Semiconductors |
|
BUK754R3-75C bảng dữ liệu(HTML) 2 Page - NXP Semiconductors |
2 / 13 page BUK75_7E4R3-75C_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 10 August 2006 2 of 13 Philips Semiconductors BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET 3. Ordering information 4. Limiting values [1] Refer to document 9397 750 12572 for further information. [2] Current is limited by chip power dissipation rating. [3] Continuous current is limited by package. [4] Conditions: a) Maximum value not quoted. Repetitive rating defined in Figure 16. b) Single-pulse avalanche rating limited by Tj(max) of 175 °C. c) Repetitive avalanche rating limited by an average junction temperature of 170 °C. d) Refer to application note AN10273 for further information. Table 2. Ordering information Type number Package Name Description Version BUK754R3-75C SC-46 plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 BUK7E4R3-75C I2PAK plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB SOT226 Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 75 V VDGR drain-gate voltage (DC) RGS =20kΩ -75 V VGS gate-source voltage - ±20 V ID drain current VGS = 10 V; see Figure 2 and 3 [1] limited by power dissipation at Tmb =25 °C [2] - 192 A limited by package at Tmb =25 °C [3] - 100 A limited by package at Tmb = 100 °C [3] - 100 A IDM peak drain current Tmb =25 °C; pulsed; tp ≤ 10 µs; see Figure 3 - 769 A Ptot total power dissipation Tmb =25 °C; see Figure 1 - 333 W Tstg storage temperature −55 +175 °C Tj junction temperature −55 +175 °C Source-drain diode IDR reverse drain current Tmb =25 °C [1] limited by power dissipation [2] - 192 A limited by package [3] - 100 A IDRM peak reverse drain current Tmb =25 °C; pulsed; tp ≤ 10 µs - 769 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy unclamped inductive load; ID = 100 A; VDS ≤ 75 V; RGS =50 Ω; VGS = 10 V; starting at Tj =25 °C - 630 mJ EDS(AL)R repetitive drain-source avalanche energy [4] --mJ |
Số phần tương tự - BUK754R3-75C |
|
Mô tả tương tự - BUK754R3-75C |
|
|
Link URL |
Chính sách bảo mật |
ALLDATASHEET.VN |
Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |