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BUK754R3-75C bảng dữ liệu(PDF) 2 Page - NXP Semiconductors

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BUK75_7E4R3-75C_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 August 2006
2 of 13
Philips Semiconductors
BUK754R3-75C; BUK7E4R3-75C
N-channel TrenchMOS standard level FET
3.
Ordering information
4.
Limiting values
[1]
Refer to document
9397 750 12572 for further information.
[2]
Current is limited by chip power dissipation rating.
[3]
Continuous current is limited by package.
[4]
Conditions:
a) Maximum value not quoted. Repetitive rating defined in Figure 16.
b) Single-pulse avalanche rating limited by Tj(max) of 175 °C.
c) Repetitive avalanche rating limited by an average junction temperature of 170
°C.
d) Refer to application note
AN10273 for further information.
Table 2.
Ordering information
Type number
Package
Name
Description
Version
BUK754R3-75C
SC-46
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
SOT78
BUK7E4R3-75C
I2PAK
plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB SOT226
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
75
V
VDGR
drain-gate voltage (DC)
RGS =20kΩ
-75
V
VGS
gate-source voltage
-
±20
V
ID
drain current
VGS = 10 V; see Figure 2 and 3
[1]
limited by power dissipation at Tmb =25 °C
[2] -
192
A
limited by package at Tmb =25 °C
[3] -
100
A
limited by package at Tmb = 100 °C
[3] -
100
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 µs; see Figure 3
-
769
A
Ptot
total power dissipation
Tmb =25 °C; see Figure 1
-
333
W
Tstg
storage temperature
−55
+175
°C
Tj
junction temperature
−55
+175
°C
Source-drain diode
IDR
reverse drain current
Tmb =25 °C
[1]
limited by power dissipation
[2] -
192
A
limited by package
[3] -
100
A
IDRM
peak reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 µs
-
769
A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 100 A; VDS ≤ 75 V;
RGS =50 Ω; VGS = 10 V; starting at Tj =25 °C
-
630
mJ
EDS(AL)R repetitive drain-source
avalanche energy
[4] --mJ


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