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LM26001BMH bảng dữ liệu(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
tên linh kiện LM26001BMH
Giải thích chi tiết về linh kiện  1.5A Switching Regulator with High Efficiency Sleep Mode
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nhà sản xuất  NSC [National Semiconductor (TI)]
Trang chủ  http://www.national.com
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LM26001BMH bảng dữ liệu(HTML) 4 Page - National Semiconductor (TI)

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background image
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
F
SYNC_DN
Lower frequency synchronization
range
As compared to nominal f
SW
-20
%
T
OFFMIN
Minimum Off-time
365
ns
T
ONMIN
Minimum On-time
155
ns
TH
SLEEP_HYS
Sleep Mode Threshold Hysteresis
VFB rising, % of TH
WAKE
101.2
%
TH
WAKE
Wake Up Threshold
Measured at falling FB, COMP =
0.6V
1.234
V
I
BOOT
BOOT Pin Leakage Current
BOOT = 16V, SW = 10V
0.0006
5.0
µA
Protection
I
LIMPK
Peak Current Limit
1.80
2.5
3.25
A
V
FB_SC
Short Circuit Frequency Foldback
Threshold
Measured at FB falling
0.87
V
F_min_sc
Min Frequency in Foldback
VFB < 0.3V
71
kHz
V
TH_PGOOD
Power Good Threshold
Measured at FB, PGOOD rising
89
92
95
%
PGOOD Hysteresis
2
7
8
%
I
PGOOD_HI
PGOOD Leakage Current
PGOOD = 5V
0.2
nA
R
DS_PGOOD
PGOOD On Resistance
PGOOD sink current = 500 µA
64
V
UVLO
Under-Voltage Lock-Out Threshold
Vin falling , shutdown, VDD =
VIN
2.60
2.9
3.20
V
Vin rising, soft-start, VDD = VIN
3.60
3.9
4.20
TSD
Thermal Shutdown Threshold
160
°C
θ
JA
Thermal Resistance
Power dissipation = 1W, 0 lfpm
air flow
38
°C/W
Logic
Vth
EN
Enable Threshold voltage
0.8
1.2
1.4
V
Enable Hysteresis
120
mV
I
EN_Source
EN Source Current
EN = 0V
4.5
µA
V
TH_FPWM
FPWM Threshold
0.8
1.2
1.6
V
I
FPWM
FPWM Leakage Current
FPWM = 5V
35
nA
EA
gm
Error Amp Trans-Conductance
400
670
1000
µmho
I
COMP
COMP Source Current
VCOMP = 0.9V
56
µA
COMP Sink Current
VCOMP = 0.9V
56
µA
V
COMP
COMP Pin Voltage Range
0.64
1.27
V
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics.
Note 2: The maximum allowable power dissipation is a function of the maximum junction temperature, T
J_MAX, the junction-to-ambient thermal resistance, θJA,
and the ambient temperature, T
A. The maximum allowable power dissipation at any ambient temperature is calculated using: PD_MAX = (TJ_MAX - TA) /θJA. The
maximum power dissipation of 2.6W is determined using T
A = 25°C, θJA = 38°C/W, and TJ_MAX = 125°C.
Note 3: The human body model is a 100 pF capacitor discharged through a 1.5 k
Ω resistor into each pin. The machine model is a 200pF capacitor discharged
directly into each pin. The charged device model is per JESD22-C101-C.
Note 4: Below 4.0V input, power dissipation may increase due to increased R
DS(ON). Therefore, a minimum input voltage of 4.0V is required to operate continuously
within specification. A minimum of 3.9V (typical) is also required for startup.
Note 5: All room temperature limits are 100% production tested. All limits at temperature extremes are guaranteed through correlation using standard Statistical
Quality Control (SQC) methods. All limits are used to calculate Average Outgoing Quality Level (AOQL).
Note 6: Iq and ISD specify the current into the VIN pin. IBIAS is the current into the VBIAS pin when the VBIAS voltage is greater than 3V. All quiescent current
specifications apply to non-switching operation.
Note 7: The absolute maximum specification applies to DC voltage. An extended negative voltage limit of -2V applies for a pulse of up to 1µs, and -1V for a pulse
of up to 20µs.
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